DSS 1630 Search Results

27BSC

Abstract: ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC
Contextual Info: ZXMC3A18DN8 ADVANCE INFORMATION COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

2SK2779

Abstract: FM20 v40150
Contextual Info: 2SK2779 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V BR DSS V I D = 100µA, VGS = 0V nA VGS = ±20V I DSS 100 µA VDS = 100V, VGS = 0V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC)

SMD rectifier 729

Contextual Info: « P D - 9.1499 International lö R Rectifier • • • • • • IRLL014N PRELIMINARY HEXFET Power MOSFET Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated V dss = 55V ^DS on

Contextual Info: Advanced Power Electronics Corp. AP9922GEO-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Supports 1.8V Gate Drive D1 Low On-resistance G1 D2 BV DSS 20V R DS ON G2 16mΩ ID RoHS-compliant, halogen-free S1 6.4A S2

transistor substitute 2sc1815

Abstract: demodulator qpsk n27m MPC31
Contextual Info: Datasheet MB86662 QPSK Demodulator for Digital Satellite Broadcasting April 2001 Edition 1.00 FME/MM/DS/0401 OVERVIEW The MB86662 is a single-chip demodulator for base band signals of digital satellite broadcasting, compatible to DVB-S Digital Video Broadcast and DSS (Digital Satellite System). It consists of two A/

2SK2779

Abstract: FM20 v40150
Contextual Info: 2SK2779 External dimensions 1 . FM20 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS min 100 ±20 V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC) W RDS (on) PD EAS *2 Unit max I GSS

SLA5037

Abstract: ON5100
Contextual Info: SLA5037 Absolute maximum ratings N-channel General purpose Electrical characteristics Ta=25°C Symbol Ratings Unit Symbol VDSS VGSS ID 100 ±20 ±10 ±40 (PW≤1ms) 200 V V A A mJ W W °C/W °C/W Vrms °C °C V(BR)DSS IGSS IDSS VTH Re(yfs) ID(pulse) EAS*

2SK2779

Abstract: FM20 v40150
Contextual Info: 2SK2779 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC) EAS *2 V I D = 100µA, VGS = 0V nA VGS = ±20V 100 µA VDS = 100V, VGS = 0V 2.0

2SK2779

Abstract: FM20
Contextual Info: 2SK2779 Absolute Maximum Ratings Ta = 25ºC Electrical Characteristics Symbol Ratings Unit Symbol VDSS 100 V V(BR) DSS V ID ±20 A VTH 1.0 ±80 A Re (yfs) 12 35 (Tc = 25ºC) EAS *2 V I D = 100µA, VGS = 0V nA VGS = ±20V 100 µA VDS = 100V, VGS = 0V 2.0

SLA5037

Contextual Info: SLA5037 Absolute maximum ratings Ratings VDSS VGSS ID 100 ±20 ±10 ±40 PW≤1ms 200 PT θ j-a θ j-c VISO Tch Tstg Unit V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss td(on) tr td(off) tf VSD trr •Equivalent circuit diagram 7 4 1 5 Unit Conditions

satellite decoder circuit diagram

Abstract: fujitsu ten Circuit Diagrams MB86662 dvb-s tuner viterbi
Contextual Info: Product Profile MB86662 May 2001 Edition 1.10 - QPSK Demodulator LSI for Digital Satellite Broadcasting FME/MM/PP/0501 OVERVIEW The MB86662 is a single-chip demodulator for base band signals of digital satellite broadcasting, compatible to DVB-S Digital Video Broadcast and DSS (Digital Satellite System). It consists of two A/D converters for Ichannel and Q-channel, a QPSK demodulator, and forward-error correction decoder which has Viterbi decoder

2SK1615

Abstract: 2SK1619 2sk1633 2SK1638 2SK1617 2SK1637 2SK1630 2SK1634 2501L 2SK1616
Contextual Info: - 114 - f ï m £ it € m m m & % H 1 K N E V Eft * 900 DSS fê. X ft* (V) fê (A) % ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft ft t*fc (13=25*0) (min) (max) V d s (V) (V> (V) (min) (max) Vd s (A) (A) (V) (min) (S) Id (A) Vd s (V) Id (A) ±30 S 8 D

RFH12N35

Abstract: RFH12N40 RFH12N
Contextual Info: Standard Power MOSFETs RFH12N35, RFH12N40 File N u m be r 1630 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM 12 A, 3 5 0 V - 4 0 0 V fusioni = 0 .3 8 f i Features: • • ■ ■ • » SOA is power-dissipation lim ited

2sk1193

Abstract: sanken MOSFET 2SK1191 2SK1366 2SK1368 2SK2243 TO-220F torque transistor 2SK1191 Sanken SH 2SK1178
Contextual Info: Bulletin No T03EA0 Oct., 1999 SANKEN MOSFET ●Nch MOS FET ●Pch MOS FET CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

FM2018

Abstract: 2sk1193 2SK1368 fkv550 2SK3332 T03EB0 2SK2245 2SK2943 2SK3460 2SK3199 equivalent
Contextual Info: Bulletin No. T03EB0 Nov., 2000 MOS FET CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein

R/CHN 745 diode

Abstract: diode 745
Contextual Info: A PT50 M50 PV R A dvanced W.\A p o w e r Te c h n o lo g y “ • R soov 74.5A o.osow POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also

sml50m50jvr

Contextual Info: Illl Vrr r = mi SEM E SML50M50JVR LAB S O T -2 2 7 P ackage O utline. 5TH GENERATION MOSFET Dimensions in mm inches 1 1.8 (0 .4 6 3 ) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS I D(cont) ^DS(on) • • • • 500V 77A 0.050Q Faster Switching

APT50M50JVR

Abstract: 50JVR
Contextual Info: A d va n ced W/Æ P o w e r Te c h n o l o g y • R A PT50M 50JVR soov 77a o.osoq POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

APT50M50JVFR

Contextual Info: A d van ced W /Æ P o w e r Te c h n o l o g y • R APT50M 50JVFR soov 77a o.osoq POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: A P T 50 M 50JV F R A dvanced W 7Æ P o w e r Te c h n o l o g y soov 77a 0.0500 POWER MOSV iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: ADVANCED P o w er Te c h n o lo g y APT50M50JVR soov 77A o.osoq POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

Contextual Info: ADVANCED POWER TECHNOLOGY b3E Í • GSSTTDT GG01132 SST HAVP A d van ced PO W ER Te c h n o l o g y APT5040BNF 500V 16A 0.40Í2 APT5050BNF 500V 14A 0.50Í2 POWER MOS IV< FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS

Contextual Info: BTE D P0U1EREX INC • TETMbSl 00DMS2Ö b HIPRX JBF245A1 JBF250Ä1 fOMEHSr Powerex, Inc., Hlllis Street, Youngwood, Pennsylvania 15697 41 2 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 r-z*\'°io Tentative

apt50m50jvr

Abstract: 0050U
Contextual Info: APT50M50JVR A dvanced P o w er Te c h n o l o g y 500V 77A 0.050U POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™