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Catalog Datasheet	Type	Document Tags	PDF
PPH* fet Abstract: heterojunction pseudomorphic hemt Contextual Info: PPH25 0.25µ µm Power PH-HEMT Process Description § § § § § § § "Pseudomorphic" PM-HEMT technology 0.25µm gate length Double heterojunction GaAlAs/GaInAs/GaAlAs/GaAs epitaxial active layer 3" wafer Spiral inductors, MIM capacitors, TaN resistors, TiWSi resistors, GaAs	Original	PPH25 DSPPH259137 PPH* fet heterojunction pseudomorphic hemt	PDF

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PPH* fet

Abstract: heterojunction pseudomorphic hemt
Contextual Info: PPH25 0.25µ µm Power PH-HEMT Process Description § § § § § § § "Pseudomorphic" PM-HEMT technology 0.25µm gate length Double heterojunction GaAlAs/GaInAs/GaAlAs/GaAs epitaxial active layer 3" wafer Spiral inductors, MIM capacitors, TaN resistors, TiWSi resistors, GaAs

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PPH25 DSPPH259137 PPH* fet heterojunction pseudomorphic hemt

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