DSC30 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC3001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA3001 DSC9001 in SSSMini3 type package • Features  Package  High forward current transfer ratio hFE with excellent linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSA3001 Silicon PNP epitaxial planar type For general amplification Complementary to DSC3001 DSA9001 in SSSMini3 type package • Features  Package  High forward current transfer ratio hFE with excellent linearity

DSC10ER

Abstract: DSC40S DSC10H DSC20H DSC30S DSC50S DSC50 dsc30 dsc40
Contextual Info: HI G H Wide Bandwidth InGaAs PIN Diodes RE MODEL DSC10ER DSC10H DSC20H DSC30S DSC30 DSC40S DSC40 DSC50S DSC50 ACTIVE AREA DIAMETER 10 10 20 30 30 40 40 50 50 m m m m m m m m m -3 dB BANDWIDTH typ. min. 55 60 GHz 42 45 GHz 32 35 GHz 18 22 GHz 10 11 GHz 14 16 GHz

Contextual Info: DSC3001 1.6 x 1.2 mm Low-Power Ultra-Miniature Oscillator General Description The DSC3001 is an ultra-miniature, low-profile complete timing solution in a 1.6 x 1.2 mm footprint. The device is available in frequencies from 1 to 150 MHz with frequency stability as

Contextual Info: DSC3001 1.6 x 1.2 mm Low-Power Ultra-Miniature Oscillator General Description The DSC3001 is an ultra-miniature, low-profile complete timing solution in a 1.6 x 1.2 mm footprint. The device is available in frequencies from 1 to 150 MHz with frequency stability as

DSC3001

Abstract: DSA300100
Contextual Info: DSA3001 Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSC3001 DSA9001 in SSSMini3 type package • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE sat

Contextual Info: DSC3001 Silicon NPN epitaxial planar type Unit: mm For general amplification Complementary to DSA3001 DSC9001 in SSSMini3 type package • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE sat

Contextual Info: DSC3001 1.6 x 1.2 mm Low-Power Ultra-Miniature Oscillator General Description The DSC3001 is an ultra-miniature, low-profile complete timing solution in a 1.6 x 1.2 mm footprint. The device is available in frequencies from 1 to 150 MHz with frequency stability as

DSC30T

Abstract: DSC30TB DSC30TC DSC30TE DSC30TG DSC30TJ DSC30TL xfsm 8207A
Contextual Info: Ordering number :EN2407 _ DSC30T No.2407 r Diffused Junction Type S i l i c o n Diode 3.0A P o k e r R e c t i f i e r Features . Peak reverse voltage Vj^-100 to -1000V . Average rectified current Io=3.0A Absolute Maximum Ratings at Peak Reverse Voltage

Contextual Info: DSA3001 Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSC3001 DSA9001 in SSSMini3 type package • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE sat

Contextual Info: DSCQ001 Silicon NPN epitaxial planar type For general amplification Complementary to DSAQ001 DSC3001 in USSMini3 type package Unit: mm • Features  High forward current transfer ratio hFE with excellent linearity  Low collector-emitter saturation voltage VCE sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSA3001 (Tentative) Silicon PNP epitaxial planar type For general amplification Complementary to DSC3001 • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit Collector-base voltage (Emitter open)

DSC3001

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC3001 (Tentative) Silicon NPN epitaxial planar type For general amplification Complementary to DSA3001 • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit Collector-base voltage (Emitter open)

DSC30T

Abstract: DSC30TC DSC30TE DSC30TG DSC30TJ DSC30TL
Contextual Info: D • it / v I S ig m ii O U O VRM— —1 * U I " 3 . 0A M M M :3fe 0 0 -1 0 0 0 V I 0= 3 . 0 A t a= 2 5 T DSC30TB D SC30TC DSC30 TE VRM - 1.00 -200 -400 V — 3-0 A 180 A 1£# iW EJg I 0 Ta = 5 0 * c I FSM 5 OH z i B £ v & 1 V 1 9 II T j -* 150 cc

DSC3001

Abstract: DSA3001 ZJC00439BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC3001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA3001 • Features  Package  High forward current transfer ratio hFE with excellent linearity  Eco-friendly Halogen-free package

DSA3001

Abstract: DSC3001 ZJC00435BED DSA300
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSA3001 Silicon PNP epitaxial planar type For general amplification Complementary to DSC3001 • Features  Package  High forward current transfer ratio hFE with excellent linearity  Eco-friendly Halogen-free package

DSC30T

Abstract: DSC30TB DSC30TC DSC30TE DSC30TG DSC30TJ DSC30TL
Contextual Info: Ordering number:EN2407 DSC30T Diffused Junction Silicon Diode 3.0A Power Rectifier Features Package Dimensions • Peak reverse voltage : VRM=100 to 1000V. · Average rectified current : IO=3.0A unit:mm 1176 [DSC30T] C:Cathode A:Anode Specifications Absolute Maximum Ratings at Ta = 25˚C

DO-151

Abstract: DFA12E DSA26C DSK10L DSK10 lfb01l SVC251Y GMA01 DSB015 ds442x
Contextual Info: DIODES, THYRISTORS, SENSO High-speed Switching Diodes Plastic-package Diodes Device l0 A Vr <V) Package type 0.10 80 MCP2 DCF010 0,10 so DCG010 0.10 80 D S E 01 0* Features Device Single DCA015 MCP Com m on anode DCB015 MCP Com m on cathode DSA015 10 (A)

R3051

Abstract: R3001
Contextual Info: Data Book C, Section 5.5, Page 1 IDT79R3051/3051E/3052/3052E IDT79R3051 FAMILY OF INTEGRATED RISControllers PRELIMINARY IDT 79R3051™, 79R3051E IDT 79R3052™, 79R3052E In teg rated D evice T echnology, Inc. FEATURES: — On-chip DMA arbiter — Bus Interface M inimizes Design Complexity

Contextual Info: BiCMOS StaticRAM 240K 16K x 15-BIT CACHE-TAG RAM For PowerPC and RISC Processors FEATURES: • 16K x 15 Configuration - 1 2 TAG Bits - 3 Separate I/O Status Bits (Valid, Dirty, Write Through) • Match output uses Valid bit to qualify MATCH output • High-Speed Address-to-Match comparison times

Contextual Info: IDT72261 IDT72271 CMOS SUPERSYNC FIFO 16,384x9, 32,768x9 FEATURES: DESCRIPTION: • • • • • • The IDT72261/72271 are monolithic, CMOS, high capac­ ity, high speed, low power first-in, first-out FIFO memories with clocked read and write controls. These FIFOs are

Contextual Info: CMOS SyncFIFO IDT723611 64x36 Integrated Device Technology, Inc. FEATURES: • Free-running CLKA and CLKB may be asynchronous or coincident permits simultaneous reading and writing of data on a single clock edge • 64 x 36 storage capacity • Synchronous data buffering from Port A to Port B

Contextual Info: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed access The IDT71V321 is a high-speed 2K x 8 Dual-Port Static RAMs with internal interrupt logic for interprocessor com ­

Contextual Info: CMOS SUPERSYNC FIFO 8 ,1 9 2 x 1 8 ,1 6 ,3 8 4 x 1 8 FEATURES: • • • • • • • • • • • • • • • • 8,192 x 18-bit storage capacity IDT72255 16,384 x 18-bit storage capacity (IDT72265) 10ns read/write cycle time (8ns access time)