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    RF3931

    Abstract: Gan transistor mobile rf power amplifier transistor GaN BJT DSB070829 GaN amplifier rf gan amplifier
    Contextual Info: RF3931 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=30W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation RF IN


    Original
    rf3931dsb070829gan transistormobile rf power amplifier transistor+3gan bjtgan amplifierrf gan amplifier PDF

    Contextual Info: RF3932 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=60W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation RF IN


    Original
    rf3932dsb070829 PDF