DSAB3510 Search Results
DSAB3510 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
KP-2012SECKContextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip. |
Original |
kp-2012seck2000pcsdsab3510jun/29/2007 | |
|
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SECK Features Super Bright Orange Description 2.0mmx1.25mm SMT LED,1.1mm thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip. Wide viewing angle. |
Original |
kp-2012seck2000pcssin2010dsab3510+1 | |
|
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
kp-2012seck2000pcsdsab3510sep/18/2013 | |
KP-2012SECK
Abstract: KP-2012
|
Original |
kp-2012seck2000pcsmounti3510aug/17/2010+2 | |
|
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
kp-2012seck2000pcsdsab3510sep/18/2013 | |
|
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP KP-2012SECK Features SUPER BRIGHT ORANGE Description 2.0mmx1.25mm SMT LED,1.1mm THICKNESS. The Super Bright Orange source color devices are made LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode. WIDE VIEWING ANGLE. |
Original |
kp-2012seck2000pcsdsab3510mar/16/2005 | |
|
Contextual Info: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KP-2012SECK Super Bright Orange Features Description z 2.0mmx1.25mm SMT LED,1.1mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip. |
Original |
kp-2012seck2000pcsdsab3510apr/30/2010 |