DS99415 Search Results

Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR

DS99415

Contextual Info: Advance Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement ModeAvalanche Rated RDS on = 500 V = 30 A Ω = 200 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings

QG SMD TRANS

Abstract: PLUS220SMD
Contextual Info: Advance Technical Information PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTT 30N50P IXTQ 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement ModeAvalanche Rated RDS on = 500 V = 30 A Ω = 200 mΩ TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings

30N50P

Abstract: 30N50 PLUS220SMD IXTH30N50P to-3p mounting IXTQ30N50P
Contextual Info: PolarHVTM Power MOSFET VDSS ID25 IXTH 30N50P IXTQ 30N50P IXTT 30N50P IXTV 30N50P IXTV 30N50PS N-Channel Enhancement Mode Avalanche Rated RDS on = 500 V = 30 A ≤ 200 mΩ Ω TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 500 V VDGR