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    IXFN280N085

    Abstract: DS98747B
    Contextual Info: IXFN280N085 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS = 85V ID25 = 280A RDS on ≤ 4.4mΩ Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS


    Original     		IXFN280N085 OT-227 E153432 100ms 280N085 9Y-N17 2-02-08-A IXFN280N085 DS98747B PDF

    Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET VDSS = 85V ID25 = 280A RDS on ≤ 4.4mΩ Ω IXFN280N085 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ VGSS


    Original     		IXFN280N085 OT-227 E153432 100ms 280N085 9Y-N17 2-02-08-A PDF