DS591 Search Results

DFM600XXM45-F000

Abstract: DS5915-1
Contextual Info: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating

DFM400NXM33-F000

Abstract: 3300V FRD
Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating

Contextual Info: DFM1200EXM18-A000 Fast Recovery Diode Module Replaces DS5913-1.0 DS5913-2 April 2011 LN28313 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates

DFM1200NXM33-F000

Abstract: DFM1200NXM33-F
Contextual Info: DFM1200NXM33-F000 Fast Recovery Diode Module Replaces DS5912-1.0 DS5912-2 December 2010 LN27788 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM1200NXM33-F000

Abstract: 100FITS
Contextual Info: DFM1200NXM33-F000 Fast Recovery Diode Module DS5912-1.0 March 2007 LN25215 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 2400A Rating

Contextual Info: DG808BC45 Gate Turn-off Thyristor DS5914-1.0 April 2007 LN25279 KEY PARAMETERS FEATURES • Double Side Cooling • High Reliability In Service • High Voltage Capability • Fault Protection Without Fuses • High Surge Current Capability • Turn-off Capability Allows Reduction in

DG808BC45

Abstract: DG808BC
Contextual Info: DG808BC45 Gate Turn-off Thyristor DS5914-2 July 2014 LN31731 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs

DIM300XCM45-F000

Contextual Info: DIM300XCM45-F000 IGBT Chopper Module DS5918- 1.3 February 2009 LN26586 FEATURES Soft Punch Through Silicon Isolated AlSiC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9V 300A

DIM300XCM45-F000

Abstract: AAAD LN25740
Contextual Info: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.1 November 2007 LN25740 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A

COMP R

Contextual Info: OPB Universal Serial Bus 2.0 Device v1.00a DS591 May 10, 2007 Product Specification Introduction LogiCORE Facts The Xilinx Universal Serial Bus 2.0 High Speed Device with On-chip Peripheral Bus (OPB) enables USB connectivity to the user’s design with a minimal amount

TGS 825

Abstract: gate turn-off Gate Turn-Off Thyristors A780A DG808BC DG808BC45 360Kn
Contextual Info: DG808BC45 Gate Turn-off Thyristor DS5914-1.1 January 2009 LN26575 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs

DFM400NXM33-F000

Abstract: DFM400NXM33-F
Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module Replaces DS5910-1.0 DS5910-2 December 2010 LN27786 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DIM300XCM45-F000

Abstract: 8888a
Contextual Info: DIM300XCM45-F000 IGBT Chopper Module Provisional DS5918 1.2 December 2007 LN25834 FEATURES 10µs Short Circuit Withstand Soft Punch Through Silicon Lead Free construction KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 4500V 2.9 V 300A 600A

DFM1200EXM18-A000

Contextual Info: DFM1200EXM18-A000 Fast Recovery Diode Module DS5913-1.0 April 2007 LN25255 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate • Triple Diodes Can be paralleled for 3600A

Contextual Info: DG808BC45 Gate Turn-off Thyristor DS5914-1.1 January 2009 LN26575 KEY PARAMETERS FEATURES Double Side Cooling ITCM VDRM I(AV) dVD/dt* dIT/dt High Reliability In Service High Voltage Capability Fault Protection Without Fuses 3000A 4500V 780A 1000V/µs 400A/µs

Contextual Info: DFM800NXM33-F000 Fast Recovery Diode Module Replaces DS5911-1.0 DS5911-2 December 2010 LN27787 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

Contextual Info: DFM1200NXM33-F000 Fast Recovery Diode Module Replaces DS5912-1.0 DS5912-2 December 2010 LN27788 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM800NXM33-F000

Abstract: DFM800NXM33-F
Contextual Info: DFM800NXM33-F000 Fast Recovery Diode Module Replaces DS5911-1.0 DS5911-2 December 2010 LN27787 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM1200EXM18-A000

Abstract: DFM1200EXM18-A
Contextual Info: DFM1200EXM18-A000 Fast Recovery Diode Module Replaces DS5913-1.0 DS5913-2 April 2011 LN28313 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates

DFM800NXM33-F000

Contextual Info: DFM800NXM33-F000 Fast Recovery Diode Module DS5911-1.0 March 2007 LN25213 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1600A Rating

Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module Replaces DS5910-1.0 DS5910-2 December 2010 LN27786 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DFM600XXM45-F000

Contextual Info: DFM600XXM45-F000 Fast Recovery Diode Module Replaces DS5915-1.0 DS5915-2 December 2010 LN27892 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

SF-31N

Abstract: 16 SOT-143 MOTOROLA C 318B MRF9011 MRF9011L SF-11N FXR SF-31N transistor d 1556 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ microlab slug tuner SF
Contextual Info: Order this data sheet by MRF9011/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF9011 MRF9011L The RF Line N P N S ilic o n H igh-Frequency T ra n sisto r . . . designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times.

EVB-USB3300-XLX

Abstract: ML401 microblaze UG082 XAPP997 usb PHY "Hot Plug and Play" x997
Contextual Info: Application Note: Embedded Processing R XAPP997 v1.0 May 15, 2007 Summary Reference Design: LogiCore OPB USB 2.0 Device Author: Geraldine Andrews, Vidhumouli Hunsigida The application note demonstrates the use of the On-Chip Peripheral Bus (OPB) Universal