DS3847 Search Results

Contextual Info: P^ pi GEC PL ESSE Y PRELIMINARY INFORMATION DS3847-1.2 DX1457 SOT-23 SURFACE MOUNT PLANAR DOPED BARRIER DIODE Low cost microwave POB diode available in a SOT-23 surface mount package, ideal for high sensitivity detection at 2.45 and 5.8GHz. FEATURES • S - X Band Operation

Contextual Info: 37böS22 00104^5 »PLSB Si G E C P L E S S E Y PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS3847-1.2 DX1457 SOT-23 SURFACE MOUNT PLANAR DOPED BARRIER DIODE Low cost microwave PDB diode available in a SOT-23 surface mount package, ideal for high sensitivity detection at

max14574

Abstract: MAX1786 MAX1788 MAX8899 DS1849 MAX16908 MAX4967 DS3610 max17018 max13487
Contextual Info: Monitor Reports by Product: 1. Find the product of interest in the table below. Note the process and/or package for that product. 2. Use the "Back" button to return to the home page. 3. Select the process in the "Process Reliability" for the product of interest.

ds3847

Abstract: BUZ-10L BUZ10L 221A-04 AN569 MTP23N05L
Contextual Info: BUZ10L MTP23N05L Pow er Field Effect T ran sistor N -C h an n el E n h an ce m e n t-M o d e S ilic o n G ate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, motor controls, solenoid and relay

BUZ-10L

Abstract: mtp23n BUZ10L
Contextual Info: MOTOROLA SC X STRS/R F 2bE D b3b72SM OGICHDG 1 O rder this d ata sheet by B U Z 10U D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ10L M TP23N 05L Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These T M O S Power FETs are designed for high speed,