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Contextual Info: ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(on) -100V 350mΩ @ VGS= -10V 450mΩ @ VGS= -6.0V ID TA = +25°C -1.6A -1.4A Description This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for |
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ZXMP10A17E6Q -100V AEC-Q101 DS36689 |