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    DS3638 Search Results

    DS3638 Datasheets Context Search

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    ZN414

    Contextual Info: GEC PLESSEY ADVANCE INFORMATION DS3638 - 2.0 ZN414Z & ZN416E AM RADIO RECEIVERS The ZN414Z is a 10 transislortuned radio frequency TRF circuit packaged in a3-pin TO-92 plastic packageforsimplicity and space e co nom y. The circuit provides a complete R. F. amplifier, detector and


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    ds3638zn414zzn416e120mv+2zn414/416ezn414 PDF

    Contextual Info: GEC PLESSEY ADVANCE INFORMATION DS3638 • 2.0 Z N 4 1 4 Z & Z N 4 1 6 E AM RADIO RECEIVERS The ZN414Z is a 10 transistor tuned radio frequency TRF circuit packaged in a 3-pin TO-92 plastic package for simplicity and space economy. The circuit provides a complete R.F. amplifier, detector and


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    ds3638zn414zzn416e-30db+137bfl522 PDF

    2N414Z

    Abstract: ZN414 DS3638 414Z plessey sp ZN414Z 64S1 ZN416E
    Contextual Info: SP GEC PLESSEY S E M I C O N D U C T O R S A D V A N C E IN F O R M A T IO N DS3638 - 2.0 ZN414Z & ZN416E AM RADIO RECEIVERS T he Z N 4 1 4 Z is a 10 tra n s is to rtu n e d radio fre q u e n cy TR F circ u it p a cka ge d in a 3-pin T O -9 2 pla stic package fo r sim p licity


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    ds3638zn414zzn416e2n414z+4zn414414zplessey sp64s1 PDF

    Contextual Info: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Features ID TA = +25°C • 0.6mm profile – ideal for low profile applications • PCB footprint of 4mm 4Ω @ VGS = 10V 0.55A • Low Gate Threshold Voltage 4Ω @ VGS = 4.5V 0.55A • Low Input Capacitance


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    dmn30h4d0lfdeaec-q101ds36380 PDF

    Contextual Info: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 300V 4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V ID TA = +25°C 0.55A 0.55A 0.44A This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


    Original
    dmn30h4d0lfdeaec-q101ds36380 PDF

    Contextual Info: DMN30H4D0LFDE N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) 300V 4Ω @ VGS = 10V 4Ω @ VGS = 4.5V 6Ω @ VGS = 2.7V ID TA = +25°C 0.55A 0.55A 0.44A This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching


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    dmn30h4d0lfdeaec-q101ds36380 PDF

    Contextual Info: A Product Line of Diodes Incorporated PAM2304 3MHz, 1A STEP-DOWN DC-DC CONVERTER Description Pin Assignments The PAM2304 is a step-down current-mode, DC-DC converter. At heavy load, the constant frequency PWM control performs excellent stability and transient response. To ensure the longest battery life in


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    pam2304ds36386 PDF