DS31481 Search Results

SOT963

Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0mΩ @ VGS= 4.5V 240mA 6.0mΩ @ VGS= 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: GE C P L E S S E Y | S E M I C O N D U C T O R S ] _ DS3148-1.0 Supersedes CD10702FDS 2.1 MA541 FAMILY LD/DTMF SWITCHABLE DIALLERS The MA541 family are keypad switchable LD/DTMF dialler devices with a last number redial facility.

Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • ID RDS(on) TA = 25°C 3.0mΩ @ VGS= 4.5V 240mA 6.0mΩ @ VGS= 1.8V 170mA N EW PRODU CT 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(on) 20V 3.0Ω @ VGS= 4.5V 6.0Ω @ VGS= 1.8V • ID TA = +25°C 240mA 180mA  Dual N-Channel MOSFET Low On-Resistance: • 3.0Ω@ 4.5V • 4.0Ω@ 2.5V

"MARKING CODE M1"

Abstract: DMN26D0UDJ-7
Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0mΩ @ VGS= 4.5V 240mA 6.0mΩ @ VGS= 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

"MARKING CODE M1"

Abstract: J-STD-020D
Contextual Info: DMN26D0UDJ NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max

Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(on) 20V 3.0 Ω @ VGS= 4.5V 6.0 Ω @ VGS= 1.8V • • ID TA = 25°C 240mA 180mA • • • • • • • Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching