DS31447 Search Results

Contextual Info: DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 70mΩ@ VGS = -10V -3.8A 120mΩ@ VGS =-4.5V -3.0A Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

sot-23 marking code 352

Abstract: DMP3098L DMP3098L-7 dmp3098 SOT-23 marking 352 MOSFET SOT23 DMB
Contextual Info: DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance: 70mΩ @ VGS = -10V, ID = -3.8A 120mΩ @ VGS = -4.5V, ID = -3.0A Low Gate Threshold Voltage

SOT-23 marking 352 MOSFET

Abstract: DMP3098L SOT23 DMB
Contextual Info: DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance: 70mΩ @ VGS = -10V, ID = -3.8A 120mΩ @ VGS = -4.5V, ID = -3.0A Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS •        ID RDS(on) max TA = +25°C 70mΩ@ VGS = -10V -3.8A 120mΩ@ VGS =-4.5V -3.0A Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

SOT23 DMB

Abstract: DMP3098L dmb transistor DMP3098L-7 marking code 336 transistor sot-23 marking AI DMB J-STD-020D DMP-30 dmp3098 MARKING CODE DMB
Contextual Info: DMP3098L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 70mΩ @ VGS = -10V, ID = -3.8A 120mΩ @ VGS = -4.5V, ID = -3.0A

SOT23 DMB

Abstract: marking 27A sot-23 SOT-23 marking 352 MOSFET
Contextual Info: DMP3098L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 70mΩ@ VGS = -10V -3.8A 120mΩ@ VGS =-4.5V -3.0A Mechanical Data Description and Applications • • This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching