DS31347 Search Results

Contextual Info: DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • 30V Description and Applications • • This new generation MOSFET has been designed to minimize the

Contextual Info: DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 38mΩ @ VGS = -10V 5.8A 64mΩ @ VGS = -4.5V 4.5A V(BR)DSS • • • • • • • • Description and Applications Mechanical Data • • This new generation MOSFET has been designed to minimize the

DMN3051L

Abstract: J-STD-020D
Contextual Info: DMN3051L N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: RDS ON < 38mΩ @ VGS = 10V, ID = 5.8A

Contextual Info: DMN3051L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C • Low On-Resistance  Low Gate Threshold Voltage 38mΩ @ VGS = -10V 5.8A  Low Input Capacitance 4.5A  Fast Switching Speed V(BR)DSS 64mΩ @ VGS = -4.5V  Low Input/Output Leakage