DS31188 Search Results
DS31188 Datasheets Context Search
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Contextual Info: DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance 90 m @ VGS = 4.5V 110 m @ VGS = 2.5V Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 |
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DMN3200U OT-23 J-STD-020 MIL-STD-202, DS31188 | |
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Contextual Info: DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 90 mΩ @ VGS = 4.5V • 110 mΩ @ VGS = 2.5V • 200 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage |
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DMN3200U AEC-Q101 OT-23 J-STD-020C DS31188 | |
DMN3200U-7
Abstract: diode 3kv 1a DMN3200U
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Original |
DMN3200U AEC-Q101 OT-23 J-STD-020C DS31188 DMN3200U-7 diode 3kv 1a DMN3200U | |
67A SOT 23 6
Abstract: DMN3200U diode 3kv 1a "Marking code" 2A SOT-23 DMN3200U-7 sep 67a J-STD-020D
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DMN3200U AEC-Q101 OT-23 J-STD-020D DS31188 67A SOT 23 6 DMN3200U diode 3kv 1a "Marking code" 2A SOT-23 DMN3200U-7 sep 67a J-STD-020D | |
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Contextual Info: DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data Features N EW PRODU CT • • • • • • • • • Low On-Resistance • 90 mΩ @ VGS = 4.5V • 110 mΩ @ VGS = 2.5V • 200 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage |
Original |
DMN3200U AEC-Q101 OT-23 J-STD-020D DS31188 |