DS31186 Search Results
DS31186 Datasheets Context Search
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Contextual Info: DMN2100UDM N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary 55mΩ @ VGS = 4.5V 4.0A 70mΩ @ VGS = 2.5V 3.5A 90mΩ @ VGS = 1.8V 3.1A 130mΩ @ VGS = 1.5V 2.5A 20V • • • • • • • • ID max TA = 25°C RDS ON max Low On-Resistance Low Gate Threshold Voltage |
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DMN2100UDM AEC-Q101 DS31186 | |
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Contextual Info: DMN2100UDM N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 55mΩ @ VGS = 4.5V 4.0A 70mΩ @ VGS = 2.5V 3.5A 90mΩ @ VGS = 1.8V 3.1A 130mΩ @ VGS = 1.5V 2.5A 20V • • • • • • • • Low On-Resistance Low Gate Threshold Voltage |
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DMN2100UDM AEC-Q101 DS31186 | |
DMN2100UDM
Abstract: J-STD-020D
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DMN2100UDM AEC-Q101 OT-26 J-STD-020D DS31186 DMN2100UDM J-STD-020D | |
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Contextual Info: DMN2100UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 55 mΩ @ VGS = 4.5V • 70 mΩ @ VGS = 2.5V • 90 mΩ @ VGS = 1.8V • 130 mΩ @ VGS = 1.5V Low Gate Threshold Voltage |
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DMN2100UDM AEC-Q101 OT-26 J-STD-020C DS31186 | |
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Contextual Info: DMN2100UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 55 mΩ @ VGS = 4.5V • 70 mΩ @ VGS = 2.5V |
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DMN2100UDM AEC-Q101 OT-26 J-STD-020D DS31186 | |
DMN2100UDM
Abstract: PART marking d2
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DMN2100UDM AEC-Q101 OT-26 J-STD-020C DS31186 DMN2100UDM PART marking d2 |