DS30019 Search Results

Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • Guard Ring Die Construction for Transient Protection · · · · Low Power Loss, High Efficiency · TO-220AB L High Surge Capability B High Current Capability and Low Forward Voltage Drop

20100CT

Abstract: 2080CT MBR20100CT MBR2070CT
Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

2080CT

Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

20100CT

Abstract: 2080CT MBR20100CT MBR2070CT
Contextual Info: MBR2070CT - MBR20100CT VISHAY 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER LITEMZI y POWER SEMICONDUCTOR Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection TO-220AB Low Power Loss, High Efficiency L B High Surge Capability High Current Capability and Low Forward Voltage Drop

uA710

Abstract: ua 710 QEB441 730nm tr 2001
Contextual Info: SURFACE MOUNT INFRARED LIGHT EMITTING DIODE QEB441 PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) .041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) 0.043 (1.1) 0.020 (0.5) ANODE 0.024 (0.6) 0.016 (0.4)

Contextual Info: SURFACE MOUNT INFRARED LIGHT EMITTING DIODE QEB441 PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) .041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) 0.043 (1.1) 0.020 (0.5) ANODE 0.024 (0.6) 0.016 (0.4)

20100ct

Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

2080CT

Abstract: marking 5c 12 20100CT MBR20100CT MBR2070CT
Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

20100CT

Abstract: 2080CT MBR20100CT MBR2070CT
Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • • • • • • Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop

20100CT

Abstract: 2080CT MBR20100CT MBR2070CT schottky rectifier mbr
Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

Contextual Info: MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

4n25 application note

Abstract: optocouplers 4n35 4N35 application note 4N25 phototransistor 3 pin t-1 ir phototransistor 4N362 H11A4 4N35 circuit infrared phototransistor for tv
Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 4N28 H11A3 4N35 H11A4 4N36 H11A5 DESCRIPTION The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual