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CDA 2170 Abstract: Gan hemt transistor RFMD rfha3942 Contextual Info: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die 35W Linear GaN on SiC Power Amplifier Die Package: Die RF OUT VD Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain = 16.3dB at 2GHz	Original	rfha3942d -40dbc ds121113 cda 2170 +2gan hemt transistor rfmd rfha3942	PDF

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CDA 2170

Abstract: Gan hemt transistor RFMD rfha3942
Contextual Info: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die 35W Linear GaN on SiC Power Amplifier Die Package: Die RF OUT VD Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain = 16.3dB at 2GHz

Original

rfha3942d -40dbc ds121113 cda 2170 +2

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