DS11507 Search Results
DS11507 Datasheets Context Search
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Contextual Info: DI9945 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 llll tpTffl ,6 TL uuu A P ÏT -M -N - Dim |
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DI9945 25RCE DS11507 | |
DI9945Contextual Info: DI9945 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E Min Max A 3.94 4.19 |
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DI9945 DS11507 DI9945 | |
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Contextual Info: VISHAY DI9945 [LITER]!!' POWE R S E M ICON D UCTO R j DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance |
OCR Scan |
DI9945 DS11507 | |
DI9945Contextual Info: DI9945 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance 8 5 4 |
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DI9945 DS11507 DI9945 |