DS11506 Search Results

Contextual Info: DI9956 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E Min Max A 3.94

DI9956

Abstract: TT2100
Contextual Info: VISHAY DI9956 /l i t e m i ri DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR I POW ERSEUICONDUCTOR / Features High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance

Contextual Info: DI9956 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell Density DMOS Technology Low er O n-S tate R esistance High Pow er and C urrent C apability SO-8 A P ÏT -M -N- Dim Min Max A 3.94 4.19 B 3.20 3.40 C 0.381 0.495 D 2.67 3.05 E

Contextual Info: DI9956 VISHAY D U A L N -C H A N N E L /u T E M ir I POWER SEM ICONDUCTOR/ F IE L D E N H A N C E M E N T M O D E E F F E C T T R A N S IS T O R F e a tu re s • • High Cell Density D M O S Technology Lower O n -S ta te R esistance SO-8 High Pow er and Current Capability

A5g2

Abstract: DI9956
Contextual Info: DI9956 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance 8 5