DS11401 Search Results

marking s17

Contextual Info: BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR POWER SEMICONDUCTOR Features • • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D

Contextual Info: BS817 VISHAY P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features_ • • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited tor Telephone Subsets Ideal for Automated Surface Mount Assembly

NR SOT-23

Abstract: B8817 BS817
Contextual Info: BS817 VISHAY ,- »-1 /LI T E M I 17 / POWERSEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR I Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly

BS817

Abstract: MARKING S17 TRANSISTOR SOT-23 marking JE "marking s17"
Contextual Info: BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 - H . h - A TOR VIEW T B C Mechanical Data Case: SOT-23, Plastic

BS817

Abstract: marking s17
Contextual Info: BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G Mechanical Data

"marking s17"

Abstract: BS817
Contextual Info: BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features • · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly SOT-23 A D TOP VIEW G Mechanical Data