DS11101 Search Results

Contextual Info: RF1604 BROADBAND HIGH POWER SP4T SWITCH Package Style: QFN, 12-pin, 2.5mmx2.5mm RF1604 Features        2kV HBM ESD Protection on All Ports Low Frequency to >2.7GHz Operation Low Insertion Loss: 0.4dB at 1GHz Very High Isolation: 40dB at

Contextual Info: SGA5289Z SGA5289ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA5289Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

Contextual Info: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal

Contextual Info: RVA2007L RVA2007LAnalog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x7mm VCTRL 8 Features Applications     2 3 4 5 6 GND  7 VCC  NC  Voltage Variable Attenuator RF IN 1 VPC  1750MHz to 2250MHz

sga5589z only

Abstract: tl 271
Contextual Info: SGA5589Z SGA5589ZDC to 4000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA5589Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

SGA5389Z

Abstract: SGA5389ZSR SGA-5389z DS111014
Contextual Info: SGA5389Z SGA5389ZDC to 4500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA5389Z is a high performance SiGe HBT MMIC amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

Contextual Info: SGC2363Z SGC2363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The

SGA-4563Z

Abstract: sga4563z SGA4563ZDC MMIC SOT 363 "18" Device Code tl 271 rfmd mmic SGA4563ZSR
Contextual Info: SGA4563Z SGA4563ZDC to 2500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

rfmd model marking code

Contextual Info: SGC4363Z SGC4363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGC4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

sga3263z

Contextual Info: SGA3263Z SGA3263ZDC to 5500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA3263Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

HBT transistor

Abstract: SBF4089ZPCK1
Contextual Info: SBF4089Z SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal

Contextual Info: PN2222A NPN SMALL SIGNAL TRANSISTOR Features • · · · Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available PN2907A E A B C Mechanical Data

marking EB 202 transistor

Abstract: PN2222A le
Contextual Info: PN2222A NPN SMALL SIGNAL TRANSISTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Ideal for Switching and Am plifier Applications Complementary PNP Type Available PN2907A KM hM TO-92

transistor pn2222a

Contextual Info: PN2222A NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • Epitaxial Planar Die Construction Available in Both Through-Hole and Surface Mount Packages Ideal for Switching and Amplifier Applications Complementary PNP Type Available PN2907A

Contextual Info: SGA1263Z SGA1263Z DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor SiGe HBT amplifier that offers excellent isolation and flat gain

SBB-3089Z

Abstract: SBB3089
Contextual Info: SBB3089Z SBB3089Z 50MHz to 6000MHz InGaP HBT Active Bias Gain Block 50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product Description Features RFMD’s SBB3089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active

SGA-5389z

Contextual Info: SGA5389Z SGA5389ZDC to 4500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA5389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

sga6389zsr

Contextual Info: SGA6389Z SGA6389ZDC to 4500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA6389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

Contextual Info: SGC4463Z SGC4463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGC4463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The

SGA4163ZSR

Abstract: SGA-4163Z SGA4163Z
Contextual Info: SGA4163Z SGA4163ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA4163Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and

SGA-3363Z

Abstract: SGA3363Z
Contextual Info: SGA3363Z SGA3363Z DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA3363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown

rfmd mmic

Contextual Info: SBB1089Z SBB1089Z 50MHz to 850MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50MHz to 850MHz, CASCADABLE Package: SOT-89 Product Description Features RFMD’s SBB1089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active

RFVC1824SQ

Abstract: Buffer Amplifier Ghz
Contextual Info: RFVC1824 RFVC1824Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       7.2GHz to 8.3GHz Operation -106dBc/Hz Phase Noise at 100kHz offset 12dBm POUT No external resonator or

GSM400

Abstract: RF8889A RFMD ASM RF8889 RFMD LTE Band 40
Contextual Info: RF8889A RF8889A SP10T ANTENNA SWITCH MODULE SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm RF8889A GSM Rx1 GSM Rx2 Features           GSM Rx3 TRX1 Broadband Performance Suitable for all Cellular Modulation Schemes up to