DS11008 Search Results

Contextual Info: SD101A - SD101C SCHOTTKY BARRIER DIODE Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance I T D Mechanical Data_ • • • • • DO-35 Case: DO-35, Plastic

SD101A

Abstract: SD101A-A SD101A-T SD101B SD101C
Contextual Info: SD101A - SD101C SCHOTTKY BARRIER DIODE Features • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead Free Finish, RoHS Compliant Note 2 Mechanical Data • •

PDT006A0X

Abstract: PDT006A0X3-SRZ PDT006 DC-DC DESIGN CN11124619A
Contextual Info: Preliminary Data Sheet June 13, 2011 6A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc –14.4Vdc input; 0.45Vdc to 5.5Vdc output; 6A Output Current Features RoHS Compliant Applications • Compliant to RoHS EU Directive 2002/95/EC Z versions

OF VR 10K

Contextual Info: NOT RECOMMENDED FOR NEW DESIGN, USE SD101AW – SD101CW SD101A - SD101C SCHOTTKY BARRIER DIODE Features Mechanical Data • • • • • • • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time

Contextual Info: SD101A - SD101C SCHOTTKY BARRIER DIODE Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance I T D Mechanical Data_ • • • • • DO-35 Case: D O -35, Plastic

Contextual Info: DS110-08A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)98# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3.2k V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)500 @Temp. (øC) (Test Condition)25õ

DS-1100

Abstract: SD101C SD101A SD101B SD101A Spice
Contextual Info: SD101A - SD101C SCHOTTKY BARRIER DIODE SPICE MODELS: SD101A SD101B SD101C Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance B A A C D Mechanical Data · · · ·

EPROM retention

Abstract: EPROM retention bake eprom 24c04 sugar centrifuge 24LC65 27C256 28C64A PIC16C54 PIC16C54A PIC16C55
Contextual Info: Product Reliability OVERVIEW Microchip Technology Inc.'s products provide competitive leadership in quality and reliability, with demonstrated performance of less than 100 FITs Failures in Time operating life for most products. The designed-in reliability of Microchip's products are supported by

SD101A

Abstract: SD101B SD101C
Contextual Info: SD101A • SD101C SCHOTTKY BARRIER DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance I Mechanical Data_ •

SD101A

Abstract: SD101A-A SD101B SD101C
Contextual Info: SPICE MODELS: SD101A SD101B SD101C SD101A - SD101C SCHOTTKY BARRIER DIODE Features • · · · · Low Forward Voltage Drop B A Guard Ring Construction for Transient Protection A Low Reverse Recovery Time Low Reverse Capacitance Lead Free Finish, RoHS Compliant Note 2

Contextual Info: DS110-08F Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current160 @Temp (øC) (Test Condition)100# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.3150¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)

Contextual Info: LL I LLSD I SD101A - 101C SCHOTTKY BARRIER DIODE Features LL/LLSD Devices SD Devices Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Mechanical Data_ • • • •

SD101A

Abstract: SD101B SD101C
Contextual Info: SD101A - SD101C SCHOTTKY BARRIER DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202,

OF VR 10K

Contextual Info: SPICE MODELS: SD101A SD101B SD101C SD101A - SD101C SCHOTTKY BARRIER DIODE Features • • • • • Low Forward Voltage Drop B A Guard Ring Construction for Transient Protection A Low Reverse Recovery Time Low Reverse Capacitance Lead Free Finish, RoHS Compliant Note 2

Contextual Info: SD101A - SD101C SCHOTTKY BARRIER DIODE POWER SEMICONDUCTOR Features • • • • Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance B A A C D Mechanical Data • • • • • DO-35

EPROM retention bake

Abstract: 24LC04A 24c04 National Semiconductor MICROCHIP TECHNOLOGY 920 1075
Contextual Info: M Product Reliability OVERVIEW Microchip Technology Inc.’s products provide competitive leadership in quality and reliability, with demonstrated performance of less than 100 FITs Failures in Time operating life for most products. The designed-in reliability of Microchip’s products are supported by

Contextual Info: M Product Reliability OVERVIEW Microchip Technology Inc.'s products provide competitive leadership in quality and reliability, with demonstrated performance of less than 100 FITs Failures in Time operating life for most products. The designed-in reliability of Microchip's products are supported by

Contextual Info: SD101A - SD101C SCHOTTKY BARRIER DIODE Features • · · · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance B A A C D Mechanical Data · · · · · DO-35 Case: DO-35, Plastic Leads: Solderable per MIL-STD-202,

CN11124619A

Abstract: PVX006 PDT006 ep174
Contextual Info: Preliminary Data Sheet October 17, 2011 6A Digital Pico DLynxTM: Non-Isolated DC-DC Power Modules 3Vdc ––14.4Vdc input; 0.45Vdc to 5.5Vdc output; 6A Output Current Features RoHS Compliant Applications ƒ Compliant to RoHS EU Directive 2002/95/EC Z versions