DS100615 Search Results
DS100615 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: RF7177 RF7177DualBand EGSM900/DC S1800 TxM with Integrated Receive SAW Filters DUAL-BAND EGSM900/DCS1800 TXM WITH INTEGRATED RECEIVE SAW FILTERS Package: Module 6.63 mm x 7.25 mm 1.0 mm Features Single Module Placement SMPL |
Original |
rf7177rf7177dualbandegsm900/dcs1800+2 | |
vco 10GHz
Abstract: 10GHz OSCILLATOR RFVC1801 VCO 5GHz 10GHZ wideband vco mmic
|
Original |
rfvc180110ghz-96dbc/hz100khz+5 | |
STA-5063Z
Abstract: MARKING CODE STA STA-5063 trace code marking RFMD
|
Original |
sta-5063z15dbmot-363ds100615+6 | |
8GHz oscillator
Abstract: RFVC1802 VCO BUFFER AMPLIFIER 8GHz RFVC RFVC1802PCK-410 RFVC1802S rfmd mmic QFN57
|
Original |
rfvc1802-99dbc/hz100khzds100615+7 | |
|
Contextual Info: RF2374 3V LOW NOISE AMPLIFIER 6 RF OUT RF IN 1 Logic Control GND 2 5 GND 3 4 Functional Block Diagram Applications 7 GAIN SELECT Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Low Insertion Loss Bypass |
Original |
rf2374800mhzds100615 | |
RF7178
Abstract: RF7178TR13 EGSM900 JESD22-A114 S1800 RF717 phone circuit rfmd envelope tracking
|
Original |
rf7177rf7177dualbandegsm900/dcs1800+9 | |
VCO 9GHZ
Abstract: RFVC1803
|
Original |
rfvc1803-97dbc/hz100khzds100615+1 | |
IXTJ3N150Contextual Info: Advance Technical Information IXTJ3N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 2.3A 8.0 RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings |
Original |
ixtj3n150o-247tme153432150om+1 |