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    DS100432 Datasheets Context Search

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    MMIX4B20N300

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC110 = 14A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings


    Original     		mmix4b20n300ic1106-05-12-b PDF

    MMIX4B20N300

    Abstract: G2 - 395 DS100432
    Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC90 = 15A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings


    Original     		mmix4b20n3001-23-09-ag2 - 395ds100432 PDF

    MMIX4B20N300

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G4 G3 C2 E3E4 Symbol Test Conditions Maximum Ratings


    Original     		ic110mmix4b20n3006-05-12-b PDF