DS100427 Search Results

Contextual Info: Advance Technical Information Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 4A Ω ≤ 2.2Ω TO-252 (IXFY) G S Symbol Test Conditions D (Tab)

RF7234

Abstract: C102 C112 RF72 3V W-CDMA LINEAR PA MODULE
Contextual Info: RF7234 3V TD-SCDMA/W-CDMA LINEAR PA MODULE BAND 1 AND 1880MHz TO 2025MHz Package Style: Module, 10-Pin, 3mmx3mmx1.0mm Features             VBAT TD-SCDMA and HSDPA Compliant Low Voltage Positive Bias Supply 3.4V to 4.2V

Contextual Info: Preliminary Technical Information IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 4A  2.2  TO-252 (IXFY) G S D (Tab) Symbol Test Conditions

F4N60

Abstract: IXFP4N60P3
Contextual Info: Advance Technical Information IXFY4N60P3 IXFA4N60P3 IXFP4N60P3 Polar3 TM HiPerFETTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 4A ≤ 2.2Ω Ω TO-252 (IXFY) G S D (Tab) Symbol Test Conditions

Contextual Info: RF7234 3V TD-SCDMA/W-CDMA LINEAR PA MODULE BAND 1 AND 1880MHz TO 2025MHz Package Style: Module, 10-Pin, 3mmx3mmx1.0mm Features             VBAT TD-SCDMA and HSDPA Compliant Low Voltage Positive Bias Supply 3.4V to 4.2V