DS100264 Search Results

54AC20

Abstract: 74AC AC20 E20A J14A
Contextual Info: 54AC20 Dual 4-Input NAND Gate General Description The ’AC20 contains four 4-input NAND gates. n Outputs source/sink 24 mA n Standard Military Drawing SMD n ’AC20: 5962-87613 Features n ICC reduced by 50% Logic Symbol IEEE/IEC DS100264-1 Pin Names Description

MMIX1G320N60B3

Abstract: 320N60B3 siemens ic igbt 300V 400A
Contextual Info: Advance Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: 54AC20 54AC20 Dual 4-Input NAND Gate Literature Number: SNOS083 54AC20 Dual 4-Input NAND Gate General Description The ’AC20 contains four 4-input NAND gates. n Outputs source/sink 24 mA n Standard Military Drawing SMD n ’AC20: 5962-87613 Features n ICC reduced by 50%

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT MMIX1G320N60B3 Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C