DS100222 Search Results

Contextual Info: RF7166 DUAL-BAND GSM900/DCS1800 TRANSMIT MODULE VBATT NC 2 GPCTRL1 GND GPCTRL0 1 TX ENABLE GND VRAMP Package Style: Module 6.63mmx5.24mmx1.0mm 22 21 20 19 18 17 Features „ „ „ Applications „ „ „ „ 3V Dual-Band GSM/GPRS Handsets GSM900/DCS1800 Products

IXTF1N250

Abstract: T1N2 1N250
Contextual Info: Advance Technical Information High Voltage Power MOSFET IXTF1N250 VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

RF3931

Abstract: EAR99 ATC800A gan1 ECE-V1HA101UP EEU-FC2A331 RF35 GRM55ER72A475KA01L RF3931PCBA-410 11j26
Contextual Info: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ „ Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB

Contextual Info: Advance Technical Information High Voltage Power MOSFET VDSS = 2500V ID25 = 1A Ω RDS on ≤ 40Ω IXTF1N250 N-Channel Enhancement Mode (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR