DS100121 Search Results

IXBF12N300

Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: RF7163 RF7163QuadBand GSM850/EGS M900/DCS18 00/ QUAD-BAND GSM850/EGSM900/DCS1800/ PCS1900 TRANSMIT MODULE     Applications     3V Quad-Band GSM/GPRS Handsets GSM850/EGSM900/DCS180 0/PCS1900 Products GPRS Class 12 Compliant Portable Battery-Powered

Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V IXBF12N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: power supply_본문_인쇄용_2010.06.01_Power Supply_2010_ 10. 06. 01 오후 7:31 페이지 166 DC DC DS50, DS100 DS • ■ SERIES Features: DS50-1205 DS50-1205 • 50 Watt, 100 Watt ■ Small size Small size ■ DC input voltage ■••Small size voltage

cs1674

Abstract: NS486SXL pic timing diagram IrDA Infra Red Integrated Circuits ETS-910 NS486 SXF interface 8254 with 8086 DS1287 MC146818 NS486
Contextual Info: December 1997 NS486 SXL Optimized 32-Bit 486-Class Controller with On-Chip Peripherals for Embedded Systems General Description The NS486SXL is a highly integrated embedded system controller incorporating an Intel486™-class 32-bit processor along with all of the necessary System Service Elements,

rf7163

Abstract: DCS1800 EGSM900 PCS1900 rx2egsm900 RF7163TR13
Contextual Info: RF7163 RF7163QuadBand GSM850/EGS M900/DCS18 00/ QUAD-BAND GSM850/EGSM900/DCS1800/ PCS1900 TRANSMIT MODULE     Applications     3V Quad-Band GSM/GPRS Handsets GSM850/EGSM900/DCS180 0/PCS1900 Products GPRS Class 12 Compliant Portable Battery-Powered

RF3866

Abstract: GSM900 QFN20 RF3866PCK-410
Contextual Info: RF3866 WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER/LINEAR DRIVER Features „ „ „ First Stage WiMAX LNA/Linear Driver GSM900, CDMA, PCS, UMTS LNA/Linear Drive WLAN LNA High Gain Linear Amplification VD1 NC VD2 NC NC 1 15 NC NC 2 14 NC 13 RF OUT RF IN 3

IXBF12N300

Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC90 = 12A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

IXBF12N300

Abstract: ixbf12n30 ic901
Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC90 = 12A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

RF7173

Abstract: RF7173 dual band RF7173PCBA-41X JESD22-A114 1154S HDR-1X14
Contextual Info: RF7173 DUAL-BAND GSM850/PCS1900 OR EGSM900/DCS1800 TRANSMIT MODULE     Applications     3.2V Dual-Band GSM/GPRS Handsets GSM850/DCS1900 or EGSM900/DCS1800 Products GPRS Class 12 Compliant Portable Battery-Powered Equipment GND NC RX0

Transistor BC 1078

Abstract: FPD750SOT89CE FPD750SOT89 TRANSISTOR 8550, SOT89
Contextual Info: FPD750SOT89CE FPD750SOT89 CE Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

RF7173

Contextual Info: RF7173 DUAL-BAND GSM850/PCS1900 OR EGSM900/DCS1800 TRANSMIT MODULE     Applications     3.2V Dual-Band GSM/GPRS Handsets GSM850/DCS1900 or EGSM900/DCS1800 Products GPRS Class 12 Compliant Portable Battery-Powered Equipment GND NC RX0

NS486 SXF

Abstract: NS486 8086 interfacing with 8254 peripheral PAGE 29 National Semiconductor CAT 84 pic 8086 PAGE 27 National Semiconductor CAT 84 pic timing diagram DS1287 MC146818 NS486SXF
Contextual Info: Semiconductor ADVANCE INFORMATION D ecem ber 1997 NS486 SXL Optimized 32-Bit 486-Class Controller with On-Chip Peripherals for Embedded Systems Optim ized DRAM C ontroller supports tw o banks, up to 8 M bytes each General Description The N S 486SXL is a highly integrated em bedded system

Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ