DS091021 Search Results

Contextual Info: SDA-4000 SDA-4000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-4000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) driver amplifier die. It is designed for use as an electro-absorptive

mobile rf power amplifier transistor

Abstract: RF3931 GaN amplifier
Contextual Info: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features       Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance - Output Power 30W at P3dB

JESD22-A114

Abstract: SDA5000 SDA-5000 GaN Amplifier 20GHz DC TO 20GHZ RF AMPLIFIER MMIC DC 20GHz HBT amplifier
Contextual Info: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a

Contextual Info: SDA-5000 SDA-5000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-5000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) distributed driver amplifier designed to support a

JESD22-A114

Abstract: EML Driver broadband bias tee
Contextual Info: SDA-4000 SDA-4000 GaAs Distributed Amplifier GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm Product Description Features RFMD’s SDA-4000 is a directly coupled DC GaAs microwave monolithic integrated circuit (MMIC) driver amplifier die. It is designed for use as an electro-absorptive