DS01228 Search Results
DS01228 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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452 nm laser diodeContextual Info: Data Sheet June 2001 269-Type 14xx nm Pump Laser Module with Fiber Grating Applications • Raman pump modules RPM ■ Erbium-doped fiber amplifiers (EDFA) Description Offering superior wavelength stability, the 269-type pump laser module with fiber grating is designed as a continuouswave (CW) optical pump source for erbium-doped fiber amplifiers and Raman pump modules. |
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269-typenm--1510ds01-228opto452 nm laser diode | |
VSS010
Abstract: marking AAW VSS030
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mcp6401/1r/1u/2/4/6/7/9sing78-366ds22229d-pagevss010+2 | |
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Contextual Info: MCP6491 7.5 MHz, Low-Input Bias Current Op Amps Features Description • Low Input Bias Current - 150 pA typical, TA = +125°C • Low Quiescent Current - 530 µA/amplifier (typical) • Low Input Offset Voltage - ±1.5 mV (maximum) • Supply Voltage Range: 2.4V to 5.5V |
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mcp6491sc70-5ot-23-5ds22321b-page | |
marking ABG 8pin
Abstract: 2012 Product Selector Guide PICMICRO
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mcp6h91/2/4d6-3-5778-366ds25138a-pagemarking abg 8pin+1 | |
wu25
Abstract: 5pin MARK AOL
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mcp6441battery-powe-3-6578-300ds22257a-pagewu25+1 | |
SMD SOT23 transistor MARK 1e
Abstract: sot 23 MARKING CODE RGB sot-23 Marking N2 smd code marking 56 sot23-6 SMD Marking Code Microchip TRANSISTOR SMD CODE PACKAGE SOT23
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mcp660/1/2/3/4/5/9rail78-366ds22194c-pagesmd sot23 transistor mark 1e+5 | |
1P SMD MARKING CODEContextual Info: MCP660/1/2/3/4/5/9 60 MHz, 6 mA Op Amps Features Description • • • • • • • • The Microchip Technology, Inc. MCP660/1/2/3/4/5/9 family of operational amplifiers op amps features high gain bandwidth product (60 MHz, typical) and high output short circuit current (90 mA, typical). Some also |
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mcp660/1/2/3/4/5/9rail-778-366ds22194b-page1p smd marking code | |
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Contextual Info: MCP6481/2/4 4 MHz, Low-Input Bias Current Op Amps Features Description • Low-Input Bias Current - 150 pA typical, TA = +125°C • Low Quiescent Current - 240 µA/amplifier (typical) • Low-Input Offset Voltage - ±1.5 mV (maximum) • Supply Voltage Range: 2.2V to 5.5V |
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mcp6481/2/4sc70-5ot-23-5ds20002322c-page | |
ENI 21
Abstract: Sensors PSD thermistor inr AN1228 lowpass 10K BW saw Design a Sallen-key Band-pass Butterworth filter eno12 DS01228A
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an1228ds01228a-pageeni 21sensors psd+5 | |
6024E
Abstract: professional audio limiter schematics MCP6021 MCP6021R MCP6022 MCP6023 MCP6024 SN0903 touch inductive switch soic 14pin
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mcp6021/1r/2/3/4mcp6021mcp6021rmcp6022+7 | |
MCP6442E
Abstract: MCP6442 an1332 MCP6441T MCP6441 AN1332 microchip
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mcp6441/2/4batt78-366ds22257c-pagemcp6442e+5 | |
MCP6071
Abstract: MCP6071E MCP6074E MCP6071T MCP6074 SOIC-6 microchip MCP6072 AN990 mcp6071t-e R100-10
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mcp6071/2/4mcp6071mcp6072mcp6074+7 | |
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Contextual Info: MCP6V31/1U 23 µA, 300 kHz Zero-Drift Op Amps Features Description • High DC Precision: - VOS Drift: ±50 nV/°C maximum - VOS: ±8 µV (maximum) - AOL: 120 dB (minimum, VDD = 5.5V) - PSRR: 120 dB (minimum, VDD = 5.5V) - CMRR: 120 dB (minimum, VDD = 5.5V) |
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mcp6v31/1uot-23ds25127a-page | |
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Contextual Info: MCP6V11/1U 7.5 µA, 80 kHz Zero-Drift Op Amps Features Description • High DC Precision: - VOS Drift: ±50 nV/°C maximum - VOS: ±8 µV (maximum) - AOL: 112 dB (minimum, VDD = 5.5V) - PSRR: 118 dB (minimum, VDD = 5.5V) - CMRR: 119 dB (minimum, VDD = 5.5V) |
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mcp6v11/1uot-23ds25124a-page | |
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Contextual Info: MCP6286 Low Noise, Low Power Op Amp Features • • • • • • • • • Description Low Noise: 5.4 nV/√Hz typical Low Quiescent Current: 520 µA (typical) Rail-to-Rail Output Wide Supply Voltage Range: 2.2V to 5.5V Gain Bandwidth Product: 3.5 MHz (typical) |
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mcp6286ot-23-5ds22196a-page | |
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Contextual Info: MCP6H91/2/4 10 MHz, 12V Op Amps Features: Description: • • • • • • Microchip’s MCP6H91/2/4 family of operational amplifiers op amps has a wide supply voltage range of 3.5V to 12V and rail-to-rail output operation. This family is unity gain stable and has a gain bandwidth |
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mcp6h91/2/4ds25138a-page | |
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Contextual Info: MCP6V11/1U/2/4 7.5 µA, 80 kHz Zero-Drift Op Amps Features: Description: • High DC Precision: - VOS Drift: ±50 nV/°C maximum - VOS: ±8 µV (maximum) - AOL: 112 dB (minimum, VDD = 5.5V) - PSRR: 118 dB (minimum, VDD = 5.5V) - CMRR: 119 dB (minimum, VDD = 5.5V) |
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mcp6v11/1u/2/4ot-23tssop-14 | |
MCP6N11
Abstract: MCP6N11-001 6N11001E MCP6N1 Wheatstone Bridge INA 125 P MCP6N11-005 MCP6H01 PICSTART Plus Wheatstone Resistive Bridge amplifier ina 114 sn1121
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mcp6n11ds25073a-pagemcp6n11-0016n11001e+7 | |
MICROCHIP 2012 SMD MARKING
Abstract: TRANSISTOR SMD MARKING CODE AOL SMD SOT23 transistor MARK 1e Marking Code SMD CM sot-23-5 SOT23-6 MARKING DP MCP669 abj SMD transistor MCP660 TRANSISTOR SMD MARKING CODE 1P SMD Marking Code Microchip
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mcp660/1/2/3/4/5/9ds22194d-pagemicrochip 2012 smd markingtransistor smd marking code aol+8 | |
AN990
Abstract: MCP665 MCP661E MCP661
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mcp661/2/3/5mcp661mcp663mcp662+4 | |
MCP62x
Abstract: mcp621 AN990 DS21825 MCAL MCP625
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mcp621/2/5mcp621mcp622mcp625+5 | |
ua 471 instrumentation amplifier
Abstract: mcp6071 MCP6071E gyrator MCP60 MCP6074E comparator test circuit DS00722
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mcp6071/2/4ds22142a-pageua 471 instrumentation amplifiermcp6071+6 | |
microchip 2011 product selector guide
Abstract: MCP6441 SC70-5 mcp6441t-e AN1332
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mcp6441/2/4ds22257b-pagemicrochip 2011 product selector guidemcp6441+3 | |
Wheatstone Bridge INA 125 P
Abstract: GN2011 MCP6V27 mcp6v27-e DS01228 6V27E Linear Technology ltage e3 mcp6v27E
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mcp6v27ds22049f-pagewheatstone bridge ina 125 pgn2011+5 | |