DS-350 U Search Results

U 806 DI

Contextual Info: BUZ 350 I nf ineon technologiss SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to ^DS on Package Ordering Code BUZ 350 200 V 22 A 0.12 Í2 TO-218 AA C67078-S3117-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 350 Volt V,DS .RDS onr50£î ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER VALUE UNIT 350 V ta 90 mA mA Drain-Source Voltage V DS Continuous Drain Current at Tamb=25°C

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 350 Volt VDS * RDS onf400 ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage VALUE V DS UNIT 350 V 90 mA Continuous Drain Current at Tamb=25°C •d

semikron SKFT 150

Contextual Info: 3bE D : SEMIKRON INC • a i 3 bb?l Q Q Q 2 3 5G S M S E K G -ras-^ Vdrm V rrm Tv| = 125 °C Itrms (maximum values for continuous operation) 350 A 350 A Itav (sin. 180; Tease = 76°C; 50 Hz) 150 A 150 A V US 800 15 20 SKFT 150/08 DS SKFT 150/08 DT SKFH 150/08 DS

semikron SKFT 150

Abstract: Semipack 1 skfh skfh semikron thyristor Semipack skfh semikron
Contextual Info: VDRM VRRM tq Tvj = 125 °C ITRMS (maximum values for continuous operation) 350 A V µs 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) ITAV (sin. 180; Tcase = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3 Fast Thyristor/ Diode

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 350 V olt VDS R DS on = 3 5 i i ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 350 V Continuous Drain Current at Tamb=25°C •d 90 mA Pulsed Drain Current

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 350 V o lt V DS * "o s o n r5 0 Q ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS 350 V Continuous Drain Current a tT amlj=25°C •d 90 mA

Contextual Info: MOSFETS N CHANNEL POWER MOSFETS - SURFACE MOUNT PACKAGE LCC-3 CERAMIC CHIP CARRIER cy>*S VOr DEVICE TYPE r DS ON CISS p f* VOLTS PEAK 'd AMPS SNLC120 100 9.2 0.27 15 350 SNLC220 200 5.0 0.80 15 450 SNLC320 400 3.3 1.80 20 350 SNLC420 500 2.5 3.08 20 350 SNLC130

ZVP0535A

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FEATURES * 350 V o lt VDS * R DS o n r 1 ° ° ß ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VALUE UNIT VDS -350 V Continuous Drain Current a tT am|^2 5 0C

skfh150

Contextual Info: se MIKRD n V drm tq Itrm s maximum values for continuous operation V rrm (Tv| = 125 °C) 350 A V (is 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) Ita v (sin. 180; Tease = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3

transistor buz 350

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 350 • N channel • Enhancement mode • Avalanche-rated Type VDs Jo ^DS on Package ’> Ordering Code BUZ 350 200 V 22 A 0.12 £2 TO-218 AA C67078-S3117-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 "C

ZVNL535A

Abstract: DSA003786
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL535A ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS * RDS on =40Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 350 V Continuous Drain Current at T amb=25°C

Contextual Info: NEW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL LCC-3 PACKAGE LCC-3 CERAMIC CHIP CARRIER s✓ b v dss VOLTS PEAK Id AMPS R dS oii @0.5 ID OHMS Qg nc Ciss pf* NSLC120 100 9.2 0.27 15 350 NSLC220 200 5.0 0.80 15 450 NSLC320 400 3.3 1.80 20 350 NSLC420 500

BSD235N

Abstract: JESD22-A114 L6327
Contextual Info: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 ID 0.95 A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 1200 350 mΩ V GS=±2.5 V 2100 600 -0.53 0.95 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

Contextual Info: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 ID 0.95 A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 0.95 ID A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 2100 600 mΩ V GS=±2.5 V 1200 350 -0.53 0.95 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

BSD235N

Contextual Info: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 ID 0.95 A • Avalanche rated • Qualified according to AEC Q101

OF IC 741

Abstract: internal circuit diagram of IC 741 internal structure of ic 741 internal diagram of 741 IC 741 IC circuit diagram ic 741 application 741 IC IRF 740 ic 741 DIODE 741 IC circuit applications
Contextual Info: Æ 7 SGS-THOMSON IRF 740/FI-741/FI IRF 742/FI-743/FI *•7 #» « »lllLICTW SSÖtEi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on 'd ' IRF740 IRF740FI 400 V 400 V 0.55 ß 0.55 S) 10 A 5.5 A IRF741 IRF741FI 350 V 350 V 0.55 0 0.55 0

S3V 05

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 2 - M A R C H 94_ FEATURES * 350 Volt V DS * ^ D S I o n r 4* ^ ABSOLUTE M A XIM U M RATINGS. PARAMETER SYM BO L D rain-Source Voltage V DS C ontinuous Drain Current at T amtj=25°C

Application of irf 720

Abstract: irf ballast IRF 720 IRF722FI
Contextual Info: SCS-THOMSON IRF 720/FI-721/FI IRF 722/FI-723/FI * it,. M»IHi gTïïMSD(g§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS ^DS(on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 0 'd " 3.3 A 2.5 A IRF721 IRF721FI 350 V 350 V 1.8 n 1.8 fi 3.3 A 2.5 A

Contextual Info: 5EMIKR0N V rrm tq T*j = 125 °C Itrms (maximum values for continuous operation) 350 A V US 150 A 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S 1) V drm I t a v (sin. 160', Tease = 76 °C; 50 Hz) SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3

2068 dd

Abstract: 6811 6A259 6A595 6B259 6B273 6B595
Contextual Info: ALLEGRO POWER INTERFACE APPLICATION GUIDE LED DISPLAY DRIVERS Io Abs Max Vo OUTPUTS SINK/ SOURCE DIODE CLAMP LATCHED DRIVERS SERIAL INPUT r DS on PACKAGE DEVICE 90 mA 90 mA 100 mA 100 mA 100 mA 150mA 150 mA 150 mA 150 mA 350 mA 120 mA 350 mA 17 V 17 V 20 V