DS-350 U Search Results

semikron SKFT 150

Contextual Info: 3bE D : SEMIKRON INC • a i 3 bb?l Q Q Q 2 3 5G S M S E K G -ras-^ Vdrm V rrm Tv| = 125 °C Itrms (maximum values for continuous operation) 350 A 350 A Itav (sin. 180; Tease = 76°C; 50 Hz) 150 A 150 A V US 800 15 20 SKFT 150/08 DS SKFT 150/08 DT SKFH 150/08 DS

semikron SKFT 150

Abstract: Semipack 1 skfh skfh semikron thyristor Semipack skfh semikron
Contextual Info: VDRM VRRM tq Tvj = 125 °C ITRMS (maximum values for continuous operation) 350 A V µs 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) ITAV (sin. 180; Tcase = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3 Fast Thyristor/ Diode

Contextual Info: MOSFETS N CHANNEL POWER MOSFETS - SURFACE MOUNT PACKAGE LCC-3 CERAMIC CHIP CARRIER cy>*S VOr DEVICE TYPE r DS ON CISS p f* VOLTS PEAK 'd AMPS SNLC120 100 9.2 0.27 15 350 SNLC220 200 5.0 0.80 15 450 SNLC320 400 3.3 1.80 20 350 SNLC420 500 2.5 3.08 20 350 SNLC130

skfh150

Contextual Info: se MIKRD n V drm tq Itrm s maximum values for continuous operation V rrm (Tv| = 125 °C) 350 A V (is 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) Ita v (sin. 180; Tease = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3

ZVNL535A

Abstract: DSA003786
Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL535A ISSUE 2 – MARCH 94 FEATURES * 350 Volt VDS * RDS on =40Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DS VALUE UNIT 350 V Continuous Drain Current at T amb=25°C

Contextual Info: BSD235N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 350 mΩ V GS=2.5 V 600 V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 0.95 ID A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: 5EMIKR0N V rrm tq T*j = 125 °C Itrms (maximum values for continuous operation) 350 A V US 150 A 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S 1) V drm I t a v (sin. 160', Tease = 76 °C; 50 Hz) SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3

helical antenna 434

Abstract: helical antenna 433.92 433B antenna 433MHZ PCB RF remote control circuit diagram 433.92 MHZ RF transmitter with HT12E 433.92 Antenna design 433.92 Antenna design pcb 433mhz rf module circuit diagram of fm transmitter
Contextual Info: Datasheet #DS.0021 okwelectronics.com QFMT5 & QFMR5 FM High Performance Transmitters & Receiver Modules General features • • • • • • • Miniature SIL package Fully shielded Optimal range up to 350 meters 1200 ft Single supply voltage 433.92 MHz frequency

ic bsp 350

Abstract: 235L Q67000-S227
Contextual Info: û235t>DS DOfllbE? 2Ô4 S IE M E N S BSP 350 MiniSmart • High-side switch • • • • • • • • Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse battery protection1 Switching inductive load

Contextual Info: 5 IE ì> m 013bb71 D Ü D 3 4 S 3 62G « S E K SEMIKRDN S E M I K R O N INC Vdrm V rrm tq Tvj = 125 °C V US G Itrms (maximum values for continuous operation) 350 A | 350 A (sin. 180; Tease = 76 °C; 50 Hz) 150 A 150 A Ita v 800 15 20 SKFT 150/08 DS —

irf460 to-247

Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
Contextual Info: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350

IRF74

Abstract: IRF742 IRF743
Contextual Info: [F@Mm°[M © IFHF IRF742.743 8 AMPERES 400, 350 VOLTS R|DS ON = 0.80 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRIF720

Abstract: D84CQ2
Contextual Info: IRF720,721 D84CQ2.Q1 [FIT 3 AMPERES 400, 350 VOLTS R|DS ON = 1-8 n HELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRFF310

Abstract: IRFF311
Contextual Info: [jagMiìMKS [FIT FIELD EFFECT POWER TRANSISTOR IRFF310,311 1.35 AMPERES 400, 350 VOLTS r DS ON = 3.6 n Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

RG316-DS

Contextual Info: COMPONENTS IMPEDANCE 50 OHM 50 OHM 50 OHM N MALE RIGHT ANGLE N FEMALE BULKHEAD RG316-DS Standard Lengths -12 12" -24 24" -36 36" -48 48" -60 60" •XXX Custom Length in inches LENGTH MEASURED FROM CONTACT TO CONTACT .8000 .625-24 UNEF-2A .350 MAX PANEL MOUNTING HDLE

10M45s

Abstract: IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35
Contextual Info: High Voltage Current Regulators C urrent Regulator Non switchable regulators BV*DS *0 P min. typ. V mA 350 10 20 35 Switchable regulators 450 TO-251 AA TO -220 AB TO -252 AA ,2 ’ - 0 12 3 3 IXCP 10M 35 IXCP 20M 35 IXCP 35M 35 IXCU 10M35 IXCU 20M 35 IXC U 35M35

1RF350

Abstract: Transistor IRF 044 IRF3503 TRANSISTOR 2SC 635 08/bup 3110 transistor
Contextual Info: MOTOROLA SC I X S T R S /R F IM E D • MOTOROLA 005^75 ■i SEM ICONDUCTOR I 1 j IRF350 IRF351 IRF352 TECHNICAL DATA Part Number Voss 'DS on N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF350 400 V 0.3 a IRF351 350 V 0.3 n

Contextual Info: SM012R/X New Product Vishay Siliconix N-Channel 1.8-V G-S MOSFET « ,0 " . PRODUCT SUMMARY l*DS(on) (Q ) lD ( m A ) 0.70 @ VGS = 4.5 V 600 0.85 @ V GS= 2.5 V 500 1.25 @ V q s = 1-8 V 350 V d s (V ) 20 V * 'N ESD Protected 2000 V FEATURES BENEFITS APPLICATIONS

Contextual Info: A POW ERHOUSE MOSFETS N C H A N N E L POW ER M O S F E T S - S U R F A C E M O U N T PACKAGE LCC-3 C ER AM IC CHIP CA R R IE R r DS ON Qg ;!SS @ 0.5 'D OHMS nc pf BVd s S VOLTS PEAK •d AMPS SNLC120 100 9.2 0.27 15 350 SNLC220 200 5.0 0.80 15 450 SNLC320

irf420

Abstract: IRF823 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

cfy 14 siemens

Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
Contextual Info: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5

irf120

Abstract: VN64GA oni 350 2N6658 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35

2N6658

Abstract: 2N6656 1rf820 VN64GA 2N6657 inverter irf840 IRF120 IRF122 IRF130 IRF132
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90

IRF420

Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350