DS 37A Search Results

zener diode 46a

Abstract: DSBT2-S-DC12V DSBT2-S-DC24V DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550 solid state 220 volt stabilizer circuit dsbt2-s-dc5v AC DC DIGITAL ammeter diagram
Contextual Info: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts

Contextual Info: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996 ZVP3306F _ _ FEATURES * 60 V olt V DS * R DS on = 1 4 f l PARTMARKING DETAIL - ML COMPLEMENTARY TYPE - ZVN3306F SOT23 ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage

three relay stabilizer circuit diagram

Abstract: TUBE Light Choke Coil Winding four relay stabilizer circuit diagram high frequency arc welding schematic RELAY PCB MERCURY RELAY 5V design a sequential timer to switch on and off at least 3 relays in a particular sequence using tim DS2E-M-DC12V ds1e-m DS2E-ML-DC12V DS2E-ML-DC24V
Contextual Info: DS HIGHLY SENSITIVE 1500 V FCC SURGE WITHSTANDING MINIATURE RELAY 9.9 .390 35.24 1.387 UL File No.: E43149 CSA File No.: LR26550 9.8 .386 9.9 .390 20 .787 9.8 .386 15 .590 DS4E DS-RELAYS 9.9 .390 9.8 .386 DS2E mm inch DS1E • High sensitivity: 200 mW pick-up power

MATSUA DSP2a 48v

Abstract: Matsushita Relay Technical Information, nr scr 8a 200v RP RELAY DSP1-DC12V LR26550 dsp2a relay 12v tunnel diode circuit diagram electronic choke for tube light Matsushita Miniature Relay s2 12v
Contextual Info: DSP DSPRELAYS MINIATURE POWER RELAY IN DS RELAY SERIES UL File No.: E43028 CSA File No.: LR26550 11.0 .433 20.2 .795 10.5 .413 DSP1a DSP1 mm inch DSP2a • Power types added to DS relay series • High switching capacity: 1a: 8 A 250 V AC 1a1b, 2a: 5 A 250 V AC

75N03L

Abstract: 75n03
Contextual Info: S DP /B 75N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 7 @ V G S = 10V

85N03

Abstract: 85N03L
Contextual Info: S DP /B 85N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 5 @ V G S = 10V

FDP2552

Abstract: FDB2552 25E5 tube marking m062 25E5
Contextual Info: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

FDB2552

Abstract: 2E-2 marking m062
Contextual Info: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

25E5 tube

Abstract: FDB2552 TC2-25 FDP2552 marking m062
Contextual Info: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

Contextual Info: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

FDB2552

Abstract: FDP2552 marking m062
Contextual Info: FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs

TC225

Abstract: FDB2552-F085 marking m062
Contextual Info: FDB2552_F085 N-Channel PowerTrench MOSFET 150V, 37A, 36mΩ Features Applications • r DS ON = 32mΩ (Typ.), VGS = 10V, ID = 16A • DC/DC Converters and Off-line UPS • Qg(tot) = 39nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge

Contextual Info: SIEMENS ICs for Communications Quad Framing and Line Interface Component for E1 / T1 / J1 QuadFALC PEB 22554 Version 1.1 Preliminary Data Sheet 09.98 DS 1 PEB 22554 Revision History: Current Version: 09.98 Previous Version: None Page in previous Version

Contextual Info: Advanced Power Electronics Corp. AP1203AGMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS SO-8 Compatible with Heatsink 30V R DS ON Low On-resistance G 12mΩ ID RoHS-compliant, halogen-free 37A S D Description D D D Advanced Power MOSFETs from APEC provide the designer with

b-bios

Contextual Info: PD 9.1477C International ICR Rectifier IRF3415 PRELIMINARY HEXFET^ Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS= 150V R DS on = Description Id = 0.042Í2

T0247AC

Contextual Info: kitemational PD 9.1409 SRectifier IRFP048N PRELIMINARY HEXFET Power M OSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^DS on = 0.016Î2 lD = 62A Description Fifth Generation HEXFETs from International Rectifier

RF1010

Abstract: diode body marking A 4
Contextual Info: P D - 9.1477 International XâR Rectifier IRF3415 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V DSs R DS on Description Id = 150V

FDP047AN08A0

Abstract: alternator diode 50a
Contextual Info: FDP047AN08A0 N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mΩ Features Applications • r DS ON = 4.0mΩ (Typ.), V GS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge

FDB045AN08A0

Abstract: FFDB045AN08A0T
Contextual Info: FDB045AN08A0 N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mΩ Features Applications • r DS ON = 3.9mΩ (Typ.), V GS = 10V, ID = 80A • 42V Automotive Load Control • Qg(tot) = 92nC (Typ.), VGS = 10V • Starter / Alternator Systems • Low Miller Charge

ZVP3306A

Abstract: ZVP330 T092 TAM-250
Contextual Info: P-CHANNEL ENHANCEMENT ZVP3306A MODE VERTICAL DMOS FET ISSUE 2- I MARCH 94 FEATURES * 60 Volt VD~ *R DS cm =14Q D F Gs E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage ‘DS -60 v Continuous Drain Current at Tam~25°C ID

HX8353D

Abstract: HX8353
Contextual Info: DATA SHEET DOC No. HX8353-D-DS HX8353-D 132RGB x 162 dots, 262K color, with Internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 Apr, 2010 HX8353-D 132RGB x 162 dot, 262K Color, with Internal GRAM, TFT Mobile Single Chip Driver List of Contents

FDP047AN

Contextual Info: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.7 m Ω Features Applications • R DS ON = 4.0 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 92 nC (Typ.), VGS = 10V

HX8357-D01

Abstract: MIPI dbi data rate hx8357
Contextual Info: DATA SHEET DOC No. HX8357-D00/D01-DS HX8357-D00/D01 320RGB x 480 dot, 16M color, with internal GRAM, TFT Mobile Single Chip Driver Temporary Version 00 April, 2012 HX8357-D00/D01 320RGB x 480 dot, 16M color, with internal GRAM, TFT Mobile Single Chip Driver

FDB10AN06A0

Abstract: FDP10AN06A0
Contextual Info: FDB10AN06A0 / FDP10AN06A0 N-Channel PowerTrench MOSFET 60V, 75A, 10.5mΩ Features Applications • r DS ON = 9.5mΩ (Typ.), V GS = 10V, ID = 75A • Motor / Body Load Control • Qg(tot) = 28nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management