DS 297 Search Results

200N25N

Abstract: IPB200N25N3 IPP200N25N3 IPB200N25N3 G IPP200N25N3 G IEC61249-2-21 JESD22 PG-TO220-3 IPI200N25N3 G IPP200N25N
Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 250 V R DS(on),max 20 mΩ ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature

sii861

Abstract: 19F590 SiI859 SiI-DS-0026-D 6Af amplifier
Contextual Info: SiI859 / SiI863 Data Sheet Silicon Image, Inc. Revision 1.2 May, 2002 SiI-DS-0026-D Silicon Image, Inc. SiI859 / SiI863 SiI-DS-0026-D Table of Contents Table of Contents . 2

Contextual Info: Preliminary SiI859 / SiI861 Data Sheet Silicon Image Confidential Information Silicon Image, Inc. Revision 0.6 November, 2000 SiI/DS-0026-06 Silicon Image, Inc. PRELIMINARY SiI859 / SiI861 SiI/DS-0026-06 Table of Contents Table of Contents. 2

Contextual Info: DM8606AF 6-Port Fast Ethernet Single Chip Switch Controller DAVICOM Semiconductor, Inc. DM8606AF 6-Port Fast Ethernet Single Chip Switch Controller DATA SHEET Preliminary Version: DM8606AF-DS-P03 Nov. 04, 2005 Preliminary Version: DM8606AF-DS-P03 Nov. 04, 2005

HITACHI WORKBENCH 1.01

Abstract: ALP 102 B4 i386ex i386ex intel i386 TTC 103 435 AC16 AD17 ALPS 328 TC55V1325FF-7
Contextual Info: ICs for Communications ATM Layer Processor ALP PXB 4350 E Version 1.1 Preliminary Data Sheet 09.98 DS 2 PXB 4350 E Revision History: Current Version: 09.98 Previous Version: Preliminary Data Sheet 08.97 DS 1 Page Page (in previous (in current Version) Version)

wildcard 88

Abstract: app abstract 0452A
Contextual Info: ARM DS-5 Debugger Command Reference Copyright 2010 ARM. All rights reserved. ARM DUI 0452A ID070310 ARM DS-5 Debugger Command Reference Copyright © 2010 ARM. All rights reserved. Release Information The following changes have been made to this book.

Contextual Info: SIEMENS ICs for Communications ATM Layer Processor ALP PXB 4350 E Version 1.1 Preliminary Data Sheet 09.98 DS 2 PXB 4350 E Revision History: Current Version: 09.98 Previous Version: Preliminary Data Sheet 08.97 DS 1 Page (in previous Version) Page (in current

history honour

Abstract: BE32 ARM DS-5
Contextual Info: ARM DS-5 Version 5.2 Using the Debugger Copyright 2010 ARM. All rights reserved. ARM DUI 0446B ID100410 ARM DS-5 Using the Debugger Copyright © 2010 ARM. All rights reserved. Release Information The following changes have been made to this book.

wildcard 88

Contextual Info: ARM DS-5 Version 5.2 Debugger Command Reference Copyright 2010 ARM. All rights reserved. ARM DUI 0452B ID100410 ARM DS-5 Debugger Command Reference Copyright © 2010 ARM. All rights reserved. Release Information The following changes have been made to this book.

2am smd transistor

Abstract: ALP 102 B4 i386ex intel tc55v2325ff application note scr tic 106 TC55V2325FF ATM622 alps ALP 102
Contextual Info: ICs for Communications ATM Layer Processor ALP PXB 4350 E Version 1.1 Data Sheet 08.2000 DS 1 3;%  5HYLVLRQ +LVWRU\ &XUUHQW 9HUVLRQ  Previous Version: Preliminary Data Sheet 09.98 (DS 2 Page Page Subjects (major changes since last revision)

TSB36

Abstract: sis302 SA48B PEB 2256 H V1.2 SIS 9237 dcf 2052 FRS1 relay RFT r 4100 msu 305 PEB 2256 E
Contextual Info: Y R A IN LI M E ICs for Communications R E1/T1/J1 Framer and Line Interface Component for Long and Short Haul Applications FALC 56 P PEB 2256 Version 1.2 Preliminary Data Sheet 2000-02 DS 2 • PEB 2256 PRELIMINARY Revision History: Current Version: 2000-02; DS 2

200N25N

Abstract: IEC61249-2-21 IPP200N25N3 JESD22 PG-TO220-3 IPB200N25N3
Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 20 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature

200N25N

Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 250 V RDS(on),max 20 mW ID 64 A • Very low on-resistance R DS(on) • 175 °C operating temperature

Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 250 V RDS(on),max 20 mW ID 64 A • 175 °C operating temperature

IPP200N25N3

Abstract: 200N25N
Contextual Info: IPB200N25N3 G IPP200N25N3 G IPI200N25N3 G $ *'#$%TM3 Power-Transistor Product Summary Features 9 # (!,% * ,-0+ !*% 4% * 9 6# % *% ,2'!2% # (!0'% 6 R DS(on product (FOM) VDS 250 V RDS(on),max 20 m# ID 64 A 9 % 07*-5 -, 0% 1)12!,# % R DS(on) 9   8 -. % 0!2),' 2% + . % 0!23 0%

Contextual Info: P r e l im in a r y In f o r m a t io n D a ta S h e e t PMC-960840 PM I P M C -S ierra, Inc. •/ P M 4388TO C TL ISSUE 3 OCTAL T1 FRAMER FEATURES • Integrates eight T1 framers in a single device for terminating duplex DS-1 signals. • Supports SF and ESF format DS-1 signals.

800-0040

Abstract: ND4650-PSC-06 1FC0-0000H
Contextual Info: BACK ND4650-PSC LSI Engineering Specifications Rev. 2.4 February 20, 1997 DS E ND4650-PSC-06 Table of Contents Chapter 1. Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1- 1 Chapter 2. Chip I/O Signals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2- 1

magnetron hitachi

Abstract: 2M131 Magnetron 2 kW 2M130 2M130 1601-2M131-04A hitachi 3284ps magnetron 2m GALVANOMETER magnetron launcher J30MM
Contextual Info: HITACHI Hitachi Electronic Devices Co., Ltd. 3350, Hayano Mobara-shi Chiba-ken 297 Japan Tel : + 81-475-23-1111 Fax : + 81 -475-25-0628 For Messrs. R I C H A R DS O N Date E LECTRONICS, CUSTOMER'S Set. 6, 1996 Ltd. ACCEPTANCE MAGNETRON 2M131 - SPECIFICATIONS

IR detector odti make

Abstract: Theta-JC QFP die down 7181 47 CHB 4U1 by 808 dfx PBS-2 CONNECTOR data sheet IC 7404 pml 017 38A IR receiver data sheet 51ED2
Contextual Info: PM P re lim in a r y In fo rm a tio n D a ta S h e e t • I PM C-960840 IS S U E 3 ^ 1 PM C-Sierra, Inc. # I PM 4388 TOCTL OCTAL T1 FRAMER FEATURES • Integrates eight T1 fra m e rs in a sin g le d evice fo r term inating duplex DS-1 signals. • S upports S F a nd E S F fo rm a t DS-1 signals.

Contextual Info: SIEMENS BSP 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type Vqs h BSP 297 200 V 0.65 A Type BSP 297 Ordering Code Q67000-S068 ^DS(on) Package Marking 2Q SOT-223 BSP 297 Tape and Reel Information

HX8677

Abstract: HX8678 SO402 Himax HX8660 UD 1208
Contextual Info: DOC No. HX8264-D02-DS HX8264-D02 1200 CH TFT LCD Source Driver with TCON Version 02 November, 2010 HX8264-D02 1200CH TFT LCD Source Driver with TCON List of Contents November, 2010 1. General Description . 5

ms27752-1

Abstract: MS25224-3 MS25224-1 MS25224 ms25224-2 MS25225-1 ms25214-2 MS24417-1 MS25196-1 b9001b
Contextual Info: SECTION F ACCESSORIES Introduction Switch Guar ds • Prevent accidental operation of switches • Switch operation limited to selected functions • Adaptable to one, two and four pole configurations • One hole or flush mounted variations Pushbutton Shields

MS25224-1

Abstract: MS25224 ms27752-1 MS25224-3 8201K6 MS25224-2 MS25223-2 Eaton cateye MS25221-1 NS-2B
Contextual Info: SECTION F ACCESSORIES Introduction Switch Guar ds • Prevent accidental operation of switches • Switch operation limited to selected functions • Adaptable to one, two and four pole configurations • One hole or flush mounted variations Pushbutton Shields

EP4CE15

Abstract: MS 034 BGA and QFP Altera Package mounting Altera pdip top mark jedec package MO-247 SOIC 20 pin package datasheet QFN "100 pin" PACKAGE thermal resistance Theta JC of FBGA QFN148 EP4CE22
Contextual Info: Altera Device Package Information Datasheet DS-PKG-16.2 This datasheet provides package and thermal resistance information for Altera devices. Package information includes the ordering code reference, package acronym, leadframe material, lead finish plating , JEDEC outline reference, lead