DRO 10 GHZ Search Results

dro 10 ghz

Contextual Info: DRO Phase Lock Oscillators 0.5 to 18GHz The content of this specification may change without notification 10/01/09 Oscillators Coaxial DRO Phase Lock Oscillator 4 to 18GHz DRO Phase Lock Oscillator Freq. Power Phase Noise Range Output GHz (dBm) Fre q. @1

PN9255

Abstract: PN9220-00 PN9000 pn9200 PN9230 PN9240 PN9250 PN9710 phase detector 10 khz crystal oscillator 42 MHz
Contextual Info: Tommorrow’s Phase Noise Testing Today MICROWAVE OUTPUT PN9000 AUTOMATED PHASE NOISE MEASUREMENT SYSTEM DOWNCONVERTER SERIES MICROWAVE OSCILLATORS DUT INPUT 1.7 TO 18.5 GHZ DRO LOCKED -10 dBm Min TIME BASE REF LOCKED 10 MHz IN Fc TUNE PN9250 PN9255 PN9240

resonator B69500-A9107 siemens

Abstract: microwave transistor siemens B69500-A9107 BFP405 x-band dro MMIC A04 mtt siemens SIEMENS BFP405 Siemens Microwave blocking oscillator uses
Contextual Info: Application Note No. 002 Discrete & RF Semiconductors SIEGET 25 Silicon BipolarDielectric Resonator Oscillator DRO at 10 GHz Oscillators represent the basic microwave energy source for all microwave systems such as radar, communications and navigation. A typical oscillator essentially consists of an active

FMCW Radar

Abstract: fmcw FMCW Radar Module 77 ghz FMCW radar 77 ghz W-band W-BAND radar mmic FMCW circuit TLC Precision Wafer Technology 77 ghz FMCW radar
Contextual Info: W-BAND LOWKa-Band NOISE MM-W AVEMixer SOURCE MODULE MMIC TLC-SM38/77 • 75 to 80 GHz • Output Power > 10 mW • Phase Noise - 90 dBc/Hz @ 100 kHz DESCRIPTION AND APPLICATIONS TLC’s Low Phase Noise W-Band Source Module utilizes TLC’s 38.5 GHz DRO -110 dBc/Hz and

dro 10 ghz

Contextual Info: 40 26.55 GHz VOLTAGE TUNED DRO O S C I L L AT O R S SPECIAL FEATURES • Low Phase Noise: - 85 dBc/Hz @ 10 kHz offset • Good Power Flatness: Less than ± 0.5 dB, typical • Wide Operating Temperature: - 35 to + 75 °C • Phase Locking Capability This Voltage Tuned Dielectric Resonator Oscillator

Contextual Info: Sources K EY SPECIFICATIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de­ pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti­

Contextual Info: K EY SPECIFICA TIONS AND DEFINITIONS Narda DROs operate in the 3 to 18 GHz frequency range and typically use bipolar and FET active devices, de­ pending on the requirement. These units are designed for MIL-E-5400 and MIL-E-16400 environments. Perti­ nent specifications are discussed below.

dro 10 ghz

Abstract: Schematic diagram of DRO
Contextual Info: HMC-C200 v05.0510 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier

DIELECTRIC RESONATOR OSCILLATOR 8-18 GHZ

Abstract: F5120 dro 10 ghz general microwave M5180 M5120
Contextual Info: Catalog D K C jk Over the past decade, the DRO has become the oscillator of choice for fixed-frequency applications requiring high stabil­ ity and low phase noise. General Microwave offers a highperformance line of DROs in the 5-18 GHz frequency range featuring 1.5 ppm/°C frequency stability over a wide tempera

Contextual Info: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROs - Connectorized Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier

dielectric resonator oscillator

Contextual Info: HMC-C200 v00.0509 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -124 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 125 mA Internal Voltage Regulator Internal Buffer Amplifier

Contextual Info: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROs - COnneCtORizeD tuning Frequency: 8.0 - 8.3 GHz Low ssB Phase noise: -122 dBc/Hz @ 10 kHz Offset single Positive supply: +6 to +15V @ 116 mA internal Voltage Regulator internal Buffer Ampliier

Contextual Info: HMC-C200 v06.0612 DIELECTRIC RESONATOR OSCILLATOR MODULE 8.0 - 8.3 GHz Features DROs - Connectorized Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 116 mA Internal Voltage Regulator Internal Buffer Amplifier

Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640

Abstract: Dielectric Resonator Oscillator at 11.92GHz BFP640 dielectric resonator VPS05605 BFP640 noise figure fet dro 10 ghz fet dro RF TRANSISTOR 10 GHZ low noise diagram radar circuit
Contextual Info: 11.92 GHz DRO Silicon Discretes Dielectric Resonator Oscillator at 11.92GHz utilizing BFP640 Description 3 Infineon’s BFP640 is a high-performance, low-cost Silicon-Germanium bipolar transistor housed in a 4-lead SOT-343 surface mount package. With a transition

Contextual Info: HMC-C200 v03.1009 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -122 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 125 mA Internal Voltage Regulator Internal Buffer Amplifier

Dielectric resonator oscillator

Contextual Info: HMC-C200 v00.0509 DIELECTRIC RESONATOR OSCILLATOR MODULE, 8.0 - 8.3 GHz Features Customizable Tuning Frequency: 8.0 - 8.3 GHz Low SSB Phase Noise: -124 dBc/Hz @ 10 kHz Offset Single Positive Supply: +6 to +15V @ 125 mA Internal Voltage Regulator Internal Buffer Amplifier

design DRO

Abstract: dro 10 ghz Pldro
Contextual Info: LOW NOISE PHASE LOCKED DRO 37 SPECIAL FEATURES This PLDRO uses two phase lock loops for good phase noise performance. The 6.6 GHz DRO, which drives the far-out noise levels, is phase locked to an internal 110 MHz PLXO, which drives the moderately close-in

HP5351B

Abstract: HP8510A HP8514A HP8350B
Contextual Info: CUSTOM PRODUCTS RESOMICS - DESIGN CONSIDERATIONS tfn I. DIMENSIONAL Material Diameter R U Dr x f0=57.8 Dr x fo=52.8 0.44 0.44 Lr/Dr Ratio NOTE 1: The value of Dr x fo is accurate under the following condition: a. Dr, Lr in m illim eter and fo in GHz. b. Resomics is positioned at the center of cavity and Do/Dr=Lo/Lr=3.

Contextual Info: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high

transistor s2p

Abstract: design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10 CFY35
Contextual Info: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high

x-band dro

Abstract: Dielectric Resonator Oscillator DRO HMC-C200 HMC698LP5 hmc698 design DRO dielectric resonator oscillator radar sensor x-band accuracy X-band low noise amplifiers
Contextual Info: HITTITE LAUNCHES INDUSTRY LEADING COMMERCIAL DRO PRODUCT LINE Miniature, High Stability Commercial DRO Module Offers Ultra Low Phase Noise O scillators are the fundamental element of microwave communication and sensor systems, from radar or optical telecom to test

Contextual Info: FOUR-CHANNEL DOWNCONVERTER MODEL: D C-04-04000800-01600260 FEATURES • • • • • • • • • • • • • • • High reliability spaceborne application RF input frequency. 4-8 GHz IF output frequency. 1.6-2.6 GHz

design DRO

Abstract: Anzac Electronics Dielectric Resonator Oscillator DRO anzac doubler d-5-4 DO120 Adams-Russell fet dro 10 ghz anzac doubler design dielectric resonator oscillator shunt feedback dro
Contextual Info: FREQUENCY GENERATION SELECTION GUIDE MODEL NO. FREQUENCY INPUT OUTPUT MHz (MHz) CONVERSION LOSS (dB) TYP SPURIOUS F1 (dB) TYP REJECTION F3 (dB) TYP VSWR TYP CASE1 STYLE PAGE NO. 1.7:1 2.0:1 1.8:1 1.8:1 1.7:1 1.8:1 2.0:1 C-5 RH-3 C-5 C-5 FP-3 C-5 FP-2 467

crystal oscillator 12 Ghz

Abstract: Dielectric Resonator Oscillator DRO remec oscillator
Contextual Info: REMEC 3.0 to 21.0 GHz Dielectric Resonator Oscillator DRO MDR 5100 Series Phase Locked Internal Reference Specifications : (1) Frequency Range: (2) Mechanical Tuning Bandwidth (min.)(3) Stability (max.)(4) Pushing (max.) Harmonics (max.) Spurious (max.)