S6111
Abstract: DRA01B DRA01C DRA01E DRA03TB DRA03TC DRA03TE SG16AA40 SG16AA60 SG25AA20
Contextual Info: iü & s t? p u r p p IrtlrtLOlßW 0 0 0 0*0 co eo m co cnj OOOOO r r o£ cw : te G> csi co eo co o LOLOLOLOLO LOLOo O o esj eo cg co eo co co o O O OOOOO o O -H OOOOO OOOOO CO Tstg LOLO1 -04 -0LO o o o o lo LOLOLOLOLO LOLOLOLOLO LOLOlo lo O O co co co co eo
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2-10mssg16aa40sg16aa60sg25aa20+10sg25aa40sg25aa60h-101s6111dra01bdra01cdra01edra03tbdra03tcdra03te
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SY 356
Abstract: sy 171 S6146G SF0R1A42 Sfor1a42 DRA01B DRA01C DRA01E DRA03TB DRA03TC
Contextual Info: - Si 1 Vth 1. 50 1. 50 1. 40 1. 40 1.40 2. 00 2. 00 2. 00 2. 00 1. 60 1, 60 1. 60 1. 60 1. 60 1. 60 1. 60 1. 60 2. 50 2. 50 2. 50 2. 00 2.00 2. 00 2. 00 1 . 60 1 . 60 1 . 60 1 . 60 1 . 60 1. 60 1. 60 1. 60 1. 50 1. 50 1. 50 1 . 60 2. 30 Tj °C 25 25 25 25
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sg16aa40sg16aa60sg25aa20sg25aa40+11h-101sy 356sy 171s6146gsf0r1a42sfor1a42dra01bdra01cdra01edra03tbdra03tc
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SGD-100
Abstract: SGD-100T SPD-121 SPD-121A SPD-121M SPD-121P SPD-122P SPD-221 SPD-221A
Contextual Info: Packaged GaAs Schottky Barrier Diodes Single diodes Electrical characteristics iT-, = 25 C Absolute maximum ratings Package type Device SPD-121 Ceramic Applications C- to X-band applications, DBS and measuring instruments c, t ÿ Rs Lc @ P -f If Vr IV) lo
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spd-121spd-121mspd-121pspd-122p+8spd-221dta05et0202t0220sgd-100sgd-100tspd-121aspd-221a
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02cz1002cz1102cz1202cz13+1502cz1502cz1602cz1802cz202cz20stf12a80bstc1026bstd1046btb04-600sapstf6a80bstd1040to510dhbstc1040to812njbtb15-700b
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SHS210
Abstract: SHS361
Contextual Info: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)
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sbl-12sbl-801sbl-802sbl-803+8sbl-804sbl-221shs264shs311shs320shs330shs210shs361
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SFOR1A42
Abstract: SY 356 S6370 SF0R1A42 sy 171 SG25AA60 S6111 sj 2025 DRA01B DRA01C
Contextual Info: I r t lr t L O lß W c o eo m co cnj o O O lo lo -H -H —1CO CO LO LO LO LO LO co co eo c o co LO eo o T T T T T T T T T T T T T T T T T T T T LO LO LO LO LO c o c o c o CO CO LO LO LO LO LO c o co co co eo T T T T T T T T T T T T T T T o o o o o o o o o o
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2-10mssg16aa40sg16aa60sg25aa20+12sg25aa40sg25aa60h-101sfor1a42sy 356s6370sf0r1a42sy 171s6111sj 2025dra01bdra01c
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DRA03TE
Abstract: DRA03T DRA03TB DRA03TC DRA03TG T092
Contextual Info: Ordering number : EN1881A I SA\YO DRA^T N0.I88IA Silicon Plan ar Type i 0.3A Reverse Blocking Thyristor Features •Low-power switching and control •Sm all size and light weight ■Peak OFF-state reverse voltage : —100 to —600V •Average ON-state cu rren t: 0.3A
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en1881ai88ia-600vdra03tb+5dra03tcdra03tedra03tgdra03tt092
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