DR16 Search Results
DR16 Result Highlights (2)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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HM2P08PDR161N9LF |
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Back Plane Connectors,2mm Hard Metric Series,Millipacs, Vertical Header, Type B, 125 Signal Pin, Press Fit Tail,Shielded, 250 mating cycles and ROHS Compliant | |||
HM2P08PDR161N2LF |
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Millipacs®, Back Plane Connectors, 2mm Hard Metric Series 5 Row vertical Press-Fit Header, Type B with 125 Signal Pins and RoHS compatable |
DR16 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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DR161BN |
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RF Antennas, RF/IF and RFID, ANT TUF DUCK VHF 161MHZ BNC | Original | 6 | |||
DR161MX |
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RF Antennas, RF/IF and RFID, ANT TUF DUCK VHF 161MHZ MX | Original | 6 | |||
DR16K3.5_INVAR_B&W_V | ams | Sensors, Transducers - Image Sensors, Camera - DR16K3.5_INVAR_B&W_V4_NOVREFC FT | Original | 135KB |
DR16 Price and Stock
TE Connectivity MRSSH4DR16SMGWTSWITCH ROTARY DIP HEX 0.4VA 20V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MRSSH4DR16SMGWT | Tube | 5,388 | 1 |
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MRSSH4DR16SMGWT |
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MRSSH4DR16SMGWT | 5,388 | 1 |
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TE Connectivity MRSSV0DR16SMGWTSWITCH ROTARY DIP HEX 0.4VA 20V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MRSSV0DR16SMGWT | Tube | 3,600 | 1 |
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MRSSV0DR16SMGWT | Tube | 22 Weeks, 2 Days | 3,600 |
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MRSSV0DR16SMGWT |
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MRSSV0DR16SMGWT | 3,600 | 1 |
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KOA Speer Electronics Inc SR732ATTDR169FCURRENT SENSE RESISTOR |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SR732ATTDR169F | Cut Tape | 3,099 | 1 |
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Integrated Silicon Solution Inc IS43DR16160B-37CBLIC DRAM 256MBIT PAR 84TWBGA |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IS43DR16160B-37CBL | Tray | 1,515 | 1 |
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IS43DR16160B-37CBL | 1,061 |
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TE Connectivity MRSSH4DR16SMGWTRSWITCH ROTARY DIP HEX 0.4VA 20V |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MRSSH4DR16SMGWTR | Cut Tape | 1,000 | 1 |
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MRSSH4DR16SMGWTR | 468 |
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MRSSH4DR16SMGWTR | Each | 500 |
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MRSSH4DR16SMGWTR |
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MRSSH4DR16SMGWTR | 1,000 | 1 |
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DR16 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DR1604/5A-DR1604/5G 5/16" Tin-can Diodes 特征 PF-3 FEATURES .25安培工作温度为125度,无热膨胀下. 25 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability |
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DR1604/5A-DR1604/5G MIL-STD-202, DR1604/5A DR1604/5G | |
Contextual Info: DR1602/3A-DR1602/3G Avalanche 8.4 Dish Diodes 特征 PF-2 FEATURES .底成本. Low cost .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability .易拿易放.Easy pick and place 机械数据 |
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DR1602/3A-DR1602/3G MIL-STD-202, DR1602/3A DR1602/3G | |
Elzs
Abstract: HIFN sha1 DR1600 SHA-256 hifn de-duplication hifn lzs hifn elzs lzs compression hifn encryption express
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DR1600 WP-0134-00 Elzs HIFN sha1 SHA-256 hifn de-duplication hifn lzs hifn elzs lzs compression hifn encryption express | |
Contextual Info: DR1600/1A-DR1600/1G 1/2" Press-fit Straight Lead Diodes 特征 PF-4 FEATURES .大电流承受能力.High current capability .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability 机械数据 |
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DR1600/1A-DR1600/1G MIL-STD-202, DR1600/1A DR1600/1G | |
1660Contextual Info: DR1660/1A-DR1660/1G 10mm Press-fit Lucas Diodes 特征 PF-6 FEATURES .25安培工作温度为125度,无热损耗下. 25 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability |
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DR1660/1A-DR1660/1G MIL-STD-202, DR1660/1A DR1660/1G 1660 | |
Contextual Info: DR1662/3A-DR1662/3G 13mm Press-fit Lucas Diodes 特征 PF-7 FEATURES .25安培工作温度为125度,无热损耗下. 25 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability |
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DR1662/3A-DR1662/3G MIL-STD-202, DR1662/3A DR1662/3G | |
Contextual Info: DR1620/1A-DR1620/1G Press-fit Bosch Diodes 特征 PF-5 FEATURES .25安培工作温度为125度,无热损耗下. 25 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability |
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DR1620/1A-DR1620/1G MIL-STD-202, DR1620/1A DR1620/1G | |
NMB-003
Abstract: EXAR DR Express Card 1620R 1620R AES gcm sha256 Elzs HIFN DR1600 canada ices 003 hifn de-duplication
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DR1600 PB-DR1600-0909 NMB-003 EXAR DR Express Card 1620R 1620R AES gcm sha256 Elzs HIFN canada ices 003 hifn de-duplication | |
DR1630/1AContextual Info: DR1630/1A-DR1630/1G Press-fit Motolola Diodes 特征 PF-9 FEATURES .25安培工作温度为125度,无热损耗下. 25 Ampere Operation At TL=125℃ With No Thermal Runaway. .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability |
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DR1630/1A-DR1630/1G MIL-STD-202, DR1630/1A DR1630/1G | |
Contextual Info: DR1612/3A-DR1612/3G Avalanche 9.5 Dish Diodes 特征 PF-1 FEATURES .底成本. Low cost .正向压降低.Low forward voltage drop .低漏电. Low leakage current .高浪涌承受能力.High surge current capability .易拿易放.Easy pick and place 机械数据 |
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DR1612/3A-DR1612/3G MIL-STD-202, DR1612/3A DR1612/3G | |
BE423Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro |
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TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423 | |
TC5117800bnt-60
Abstract: TC5117800B
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TC5117800BNJ/BNT-60/70 TC5117800BNT TC5117800bnt-60 TC5117800B | |
Contextual Info: TOSHIBA TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 51V16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 51V16400B ST uti lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar |
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TC51V16400BST-60/70 51V16400B TC51V16400BST 300mil) | |
MOTOROLA ONCORE UT plus
Abstract: hp 35821 6132 RAM 731 motorola MPCPRGREF/D LG E50 MPC8xx QMC SMC microcode MPC857DSL MPC857T MPC862
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MPC862UM/D MPC862 MPC862P MPC862T MPC857T MPC857DSL MOTOROLA ONCORE UT plus hp 35821 6132 RAM 731 motorola MPCPRGREF/D LG E50 MPC8xx QMC SMC microcode MPC857DSL MPC857T | |
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NJU3427
Abstract: NJU3427 E NJU3427F IC NJU3427F dr26 QFP52-A2 DR31 DR25 Diode Datasheet DR34 DR35
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NJU3427 NJU3427 36-output NJU3427FA2 NJU3427FH2 20-Seg x16-Timing 28-Seg NJU3427 E NJU3427F IC NJU3427F dr26 QFP52-A2 DR31 DR25 Diode Datasheet DR34 DR35 | |
radix-8 FFT
Abstract: yswa BR17 CI23 radix DSP24 24PORTB DR17 64 point radix 4 FFT dsp24s
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DSP24 432-lead DSP24-Y-100-C DSPA-DSP24DS radix-8 FFT yswa BR17 CI23 radix DSP24 24PORTB DR17 64 point radix 4 FFT dsp24s | |
scr FIR 3d
Abstract: A9RV data sheet scr fir 3d SCR FIR 3 D manual PACE PSR 800 Plus ta2aa f8125 F46E Nippon capacitors A-20
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DSP56311 24-Bit DSP56311UM/D Index-15 scr FIR 3d A9RV data sheet scr fir 3d SCR FIR 3 D manual PACE PSR 800 Plus ta2aa f8125 F46E Nippon capacitors A-20 | |
5.1 home theatre assembling
Abstract: marking HBAR intel 945 crb MF823 RS-422 to spi converter DSP56300 DSP56302 HC11 national marking code TTL 74215
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DSP56302 5.1 home theatre assembling marking HBAR intel 945 crb MF823 RS-422 to spi converter DSP56300 HC11 national marking code TTL 74215 | |
CL04 12 diode datasheet
Abstract: 003A 6PIN 512x 8 ROM CL06 D F2MC-16 MB90660A MB90662A MB90663A MB90P663A QFP-64
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CM43-10107-1E F2MC-16L 16-BIT MB90660A MB90P663A MB90P663A MB90663A/2A MB90V660A CL04 12 diode datasheet 003A 6PIN 512x 8 ROM CL06 D F2MC-16 MB90662A MB90663A QFP-64 | |
3pin variable resistor pin configuration
Abstract: F2MC-16 MB90V220 120 hst 25
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CM42-10102-3E F2MC-16F 16-BIT MB90220 F9702 3pin variable resistor pin configuration F2MC-16 MB90V220 120 hst 25 | |
Contextual Info: m 'i[m24û D02ô4Db 752 m- TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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m--------------24Ã TC5118180BJ/BFT-60/70 5118180BJ/B 5118180BJ/BFT QDBBH12 | |
Contextual Info: IE GEC PLESSEY SEMICONDS 37bôS5E GOD^bS^ 1 • PLSB D tw ì SPLESSEY e m ic o n d u c to r s . \ - 1 1 -0 1 - 0 5 MV1826 SIN G LE CHIP VIDEO PROGRAMMING SERVICE VPS DECO DER The MV1826 is a C M O S decoder for 625 line V P S bi phase encoded transmissions. The chip also includes an |
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MV1826 MV1826 | |
DR1-100K
Abstract: DR1-120K DR1-150K DR1-221K dr-1
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DR1-100K DR1-120K DR1-150K DR1-180K DR1-220K DR1-270K DR1-330K DR1-390K DR169 DR1-100K DR1-120K DR1-150K DR1-221K dr-1 | |
Contextual Info: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator |
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TC5117800BNJ/BNT-60/70 715mW TC5117800BNT-60) 605mW TC5117800BNT-70) |