DR-B 2003 POWER SUPPLY Search Results
DR-B 2003 POWER SUPPLY Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy | 
|---|---|---|---|---|---|
| LM759H/B |   | LM759 - Power Operational Amplifier |   | ||
| LM759CH |   | LM759 - Power Operational Amplifier, MBCY8 |   | ||
| BLA1011-300 |   | BLA1011-300 - 300W LDMOS Avionics Power Transistor |   | ||
| 27S03ADM/B |   | 27S03A - 64-Bit, Low Power Biploar SRAM |   | ||
| 27S03ALM/B |   | 27S03A - 64-Bit, Low Power Biploar SRAM |   | 
DR-B 2003 POWER SUPPLY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
| BR6216B-10LL
Abstract: BR6216B10LL "static ram 2k x 8" br6216 
 | OCR Scan | BR6216B-10LL SDIP-24 BR6216B-10LL BR6216B10LL "static ram 2k x 8" br6216 | |
| Contextual Info: GS8321V18/32/36E-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump FP-BGA Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 1.8 V +10%/–10% core power supply • 1.8 V I/O supply • LBO pin for Linear or Interleaved Burst mode | Original | GS8321V18/32/36E-250/225/200/166/150/133 165-Bump x32/x36) GS8321V18/32/36E-250/225/200/166/150/133 8321Vxx | |
| Contextual Info: GS832118/32/36E-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump FP-BGA Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply | Original | GS832118/32/36E-250/225/200/166/150/133 165-Bump x32/x36) GS832118/32/36E-250/225/200/166/150/133 8321xx | |
| GS832118E-133
Abstract: GS832118E-150 GS832118E-166 GS832118E-200 GS832118E-225 GS832118E-250 GS832132E-250 
 | Original | GS832118/32/36E-250/225/200/166/150/133 165-Bump x32/x36) 8321xx GS832118E-133 GS832118E-150 GS832118E-166 GS832118E-200 GS832118E-225 GS832118E-250 GS832132E-250 | |
| GS8321V18E-133
Abstract: GS8321V18E-150 GS8321V18E-166 GS8321V18E-200 GS8321V18E-225 
 | Original | GS8321V18/32/36E-250/225/200/166/150/133 165-Bump 8321Vxx GS8321V18E-133 GS8321V18E-150 GS8321V18E-166 GS8321V18E-200 GS8321V18E-225 | |
| zowc
Abstract: CEP- 63O HD61203 & HD61202 HD61203TFIA HD61203 BS-58 HD61200 HD61203 * HD61202 
 | OCR Scan | HD61203- HD61203 HD61202. 04b43D D04L431 004b43S zowc CEP- 63O HD61203 & HD61202 HD61203TFIA BS-58 HD61200 HD61203 * HD61202 | |
| HD61103A
Abstract: HD61103 LCD Controller HD61830 HD61102 
 | OCR Scan | HD61103A- HD61103A HD61102. HD61103A G04b375 HD61103 LCD Controller HD61830 HD61102 | |
| Contextual Info: GS88118B T/D /GS88132B(T/D)/GS88136B(T/D) 100-Pin TQFP & 165-bump BGA Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply | Original | GS88118B /GS88132B /GS88136B 100-Pin 165-bump | |
| lcd 128 64 hd61202
Abstract: HD61202-hd61203 HD61203S Hitachi graphic LCD HD61202 hitachi hd61202 hitachi hd61203 HD61203 
 | OCR Scan | D61203- HD61203 HD61202. HD61203 0E819QH C0Z19OH C0Z19QH lcd 128 64 hd61202 HD61202-hd61203 HD61203S Hitachi graphic LCD HD61202 hitachi hd61202 hitachi hd61203 | |
| Contextual Info: Preliminary U621708 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 70 ns Access Time ! Common data inputs and The U621708 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby | Original | U621708 U621708 D-01109 D-01101 | |
| U621708
Abstract: transistor A16 ZMD AG 
 | Original | U621708 U621708 D-01109 D-01101 transistor A16 ZMD AG | |
| Contextual Info: Preliminary U621708 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 70 ns Access Time ! Common data inputs and The U621708 is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby | Original | U621708 U621708 D-01109 D-01101 | |
| 8822 TRANSISTOR
Abstract: U62H64 ZMD AG 
 | Original | U62H64 U62H64 D-01109 D-01101 8822 TRANSISTOR ZMD AG | |
| fcb61c65
Abstract: SOT117 
 | OCR Scan | FCB61C65L/LL FCF61C65L FCF61C65LL fcb61c65 SOT117 | |
|  | |||
| Contextual Info: Preliminary UL62H1708B Low Voltage Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The UL62H1708B is a static RAM manufactured using a CMOS process technology with the following | Original | UL62H1708B UL62H1708B D-01109 D-01101 | |
| 8822 TRANSISTOR
Abstract: ZMD AG 
 | Original | UL62H1708B UL62H1708B D-01109 D-01101 8822 TRANSISTOR ZMD AG | |
| U6264BContextual Info: U6264B Standard 8K x 8 SRAM Features Description p 8192 x 8 bit static CMOS RAM p 70 ns Access Times p Common data inputs and The U6264B is a static RAM manufactured using a CMOS process technology with the following operating modes: - Read - Standby - Write | Original | U6264B U6264B D-01109 D-01101 | |
| Contextual Info: Preliminary UL62H1708A Low Voltage Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The UL62H1708A is a static RAM manufactured using a CMOS process technology with the following | Original | UL62H1708A UL62H1708A D-01109 D-01101 | |
| design a5 to 32 line decoderContextual Info: Preliminary UL62H1708B Low Voltage Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The UL62H1708B is a static RAM manufactured using a CMOS process technology with the following | Original | UL62H1708B UL62H1708B D-01109 D-01101 design a5 to 32 line decoder | |
| Contextual Info: Preliminary U62H1708 Automotive Fast 128K x 8 SRAM Features Description ! 131072 x 8 bit static CMOS RAM ! 35 and 55 ns Access Time ! Common data inputs and The U62H1708 is a static RAM manufactured using a CMOS process technology with the following operating modes: | Original | U62H1708 U62H1708 D-01109 D-01101 | |
| pulse amplifier measurement
Abstract: ZMD AG 
 | Original | UL62H1708A UL62H1708A D-01109 D-01101 pulse amplifier measurement ZMD AG | |
| U6264B
Abstract: PDIP28 ZMD AG 
 | Original | U6264B U6264B D-01109 D-01101 PDIP28 ZMD AG | |
| ZMD AGContextual Info: Preliminary UL62H1616B Low Voltage Automotive Fast 64K x 16 SRAM Features Description ! 65536 x 16 bit static CMOS RAM ! 15, 20 and 35 ns Access Time ! Common data inputs and The UL62H1616B is a static RAM manufactured using a CMOS process technology with the following | Original | UL62H1616B UL62H1616B D-01109 D-01101 ZMD AG | |
| SMX3200
Abstract: SMD CAPACITORS color code irc MR SERIES resistors PHILIps computer monitor schematic SMD Tantalum code capacitor color SMT4004 QFP-7MM-48-LD smd code capacitor color summit application note 22 R21-R23 
 | Original | SMT4004 SMT4004EV SMT4004EVAL SMX3200 SMD CAPACITORS color code irc MR SERIES resistors PHILIps computer monitor schematic SMD Tantalum code capacitor color QFP-7MM-48-LD smd code capacitor color summit application note 22 R21-R23 | |