DR 25 DIODE Search Results

dr25 diode specifications

Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Contextual Info: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)

Contextual Info: SINGLE PHASE FULL WAVE BRIDGES 70ns-3000ns Recovery • 1.4A - 3A ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Working Number Reverse Voltage 3 Average Rectified Current Reverse Current @ Vrwm Forward Voltage (lo) dr) (Vf) (Vrwm) 55°C 100°C 25°C

Hitachi DSA002759

Contextual Info: 2SK3082 L ,2SK3082(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to source voltage VGSS ±20 V Drain current ID 10 A 40 A 10 A 10 A 8.5 mJ 30 W Drain peak current I D(pulse) Note1 Body-drain diode reverse drain current I DR

DS0352

Contextual Info: witches 40E D DAICO I N DU ST RIE S INC SbOH TS G 00015^7 & TOT IDAI T - s i - Volume 2 Issue 2 SP2TPin Diode Switch Model No. DS0352 OPERATING CHARACTERISTICS CU RR EN T DR AI N 15 25 TYPICAL PERFORMANCE mA A T +5 VDC SUPPLY INTE RC EP T POINT, 2ND +72 d 8m

Contextual Info: FEATURES MODEL NO. DS0506 dr • 100-600 MHz ■ 0.6 dB Insertion Loss ■ Handles +25 dBm PIN Diode SP6T ■ 250 nSec Switching Speed ■ Non-Reflective ■ TTL Driver ■ 38 Pin DIP PART IDENTIFICATIO N L ^ 2 0 V T 018 DIA LEAD 2 6 CONT1 ! " 0" 14 3 1 5 7 8 9 11 12 1315 19

1SV212

Contextual Info: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV212 U nit in mm V C O FOR UHF B A N D R A D IO T3i±i +a 2 5 • • 1.5-<11 5 U ltra Low Series Resistance: rs = 0.2il Typ. Useful for Small Size Set z S 1 J . !. 7=_ dr M A X IM U M RATIN G S (Ta = 25°C)

MC 790 P

Abstract: 1D-10A
Contextual Info: Æ lltro n 3301 ELECTRONICS WAY. T E L : 407 848-4311 N-CHANNEL ENHANCEMENT MOS FET 4 0 0 V, 1O A , 0 . 5 6 n SDF340 SDF340 dr -CD VDSS 400 V dc VDGR 400 V dc VGS ±20 Vdc Gate-Source Voltage C o n ( i nuous Drain Current Continuous ( T c = 25° C) SCHEMATIC

2502M

Abstract: MR2500M MR2501M MR2504M
Contextual Info: Looking For MR2500M, MR2501M, MR2502M, MR2504M, MR2506M, MR2508M, MR2510M Alternatives? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 25 AMP BUTTON DIODES MECHANICAL SPECIFICATION FEATURES

MR251

Abstract: MR2510
Contextual Info: Looking For MR2500, MR2501, MR2502, MR2504, MR2506, MR2508, MR2510 Alternatives? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 25 AMP BUTTON DIODES MECHANICAL SPECIFICATION FEATURES Suggested Alternative For The MR2500, MR2501,

mss60.341

Abstract: n10 diode N092 SCHOTTKY DIODE BRIDGE mss60 Diode DR 25 PCR46 dr 25 diode MSS25 MSS40
Contextual Info: Spice Models for Metelics Schottky Diodes 1 of 6 The standard diode model found in Spice Ver 2 does not correctly model the reverse bias characteristics of Metelics’ Schottky diodes. To correct this problem, use the macromodel shown below. DR Anode Cathode

DR2400

Abstract: dr 25 diode Diode DR 25 MR2404 diode MR2406 MR2401 MR2406F mr2402 MR2404 Alternative
Contextual Info: Looking For MR2400, MR2401, MR2402, MR2404, MR2406 Alternatives? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 25 AMP TAB MOUNTED BUTTON DIODES MECHANICAL SPECIFICATION FEATURES Die Size:

dr 25 diode

Abstract: dR2406 Diode DR 25
Contextual Info: Looking For MR2400, MR2401, MR2402, MR2404, MR2406 Alternatives? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 25 AMP TAB MOUNTED BUTTON DIODES MECHANICAL SPECIFICATION FEATURES Die Size:

MR2400F

Abstract: DR2400F MR2402F MR2404F dr 25 diode MR2406F mr2402 MR2401F
Contextual Info: Looking For: MR2400F, MR2401F, MR2402F, MR2404F, MR2406F Alternatives? DIOTEC ELECTRONICS CORP 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 25 AMP SOFT RECOVERY FAST SWITCHING TAB MOUNTED DIODES MECHANICAL SPECIFICATION

7506F

Abstract: 7502F 7500f 3501S 7500-F 7504F dr 25 diode
Contextual Info: DIOTEC ELECTRONICS CORP Looking For: Electric Vehicle Fast Switching Motor Control Diodes? 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 Data Sheet No. DISRT-7500-1A 75 AMP SOFT RECOVERY FAST SWITCHING TAB MOUNTED DIODES

dr 25 diode

Abstract: DR3506FR 3500F 3502F 3504F 3506F
Contextual Info: DIOTEC ELECTRONICS CORP Looking For: Electric Vehicle Fast Switching Motor Control Diodes? 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 Data Sheet No. DISRT-3500-1A 35 AMP SOFT RECOVERY FAST SWITCHING TAB MOUNTED DIODES

Contextual Info: General Description of Light Emitting Diodes • Handling Precautions This product is sensitive to static electricity and demands a lot of attention. Please take all possible measures for static electricity and surge solution. ■ Lead Forming Method ; ;

zener spice model

Contextual Info: DE3S062D Spice Parameter Reference Total pages page 1 1 Device symbol Product name: DE3S062D Product type: Zener Diode 3 1 2 Parameters * cathode1 * | anode1, anode2 * | | cathode2 * | *$ .SUBCKT DE3S062D 1 3 2 D11 3 2 DF D12 2 p DR V1 p 3 0.002 D21 3 1 DF

Contextual Info: flâ MICRO EL EC TRON IC S CORP DE | b D W f l f l DGODtlt 4 J ”' T- V / - 2 / Light Emitting Diodes TYPE Vf COLOUR \P nm Red Red Orange Green Yellow Orange 660 700 635 565 585 635 0.30 0.50 1.00 0.50 0,50 1,00 20 20 20 20 20 20 2 3 3 3 3 3 20 20 20 20

Contextual Info: F U JI lä 'U J M s u 'ü ü U K 2SK1278 N-channel MOS-FET F-V Series 500V > Features - l,lß 10A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control Inverters Choppers > Maximum Ratings and Characteristics

IFND89

Contextual Info: 04/2009 B-XX IFND89 N-Channel JFET with Integrated Back to Back Diodes PACKAGE: Absolute maximum ratings at TA = 25°C Reverse Gate Source & Gate Drain Voltage Gate Current, IG Continuous Device Power Dissipation Power Derating Operating Junction Temperature, TJ

2SK1818-M

Contextual Info: 2SK1818-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL ENHANCEMENT TYPE MOS-FET F-V S E R IE S • Features Outline Drawings • Include fa st recovery diode • High vo ltag e • Low driving p o w e r ■ Applications Gate • M o to r controllers

S250 MOSFET

Contextual Info: 2SK2052 SIPMOS FU JI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-V SERIES • Features Outline Drawings • Include fast recovery diode • High voltage • Low driving power ■ Applications • Motor controllers • Inverters • Choppors Max. Ratings and Characteristics

5503 MOSFET

Abstract: 2SK2052 A2292
Contextual Info: 2SK2052 S IP M O S F U JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F - V SER IE S • Outline Drawings ■ Features • Include fast recovery diode • High voltage • Low driving p o w e r ■ Applications • M o to r controllers • Inverters

DZ2J100

Contextual Info: DZ2J100 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J100 Product type: Zener Diode Parameters *DEVICE=DZ2J100,D * DZ2J100 D model *$ .SUBCKT DZ2J100 A K D1 A K DF DZ K 1 DR V1 1 A 0.01 .MODEL DF D + IS=1.1985E-15 + N=1.025