DR 25 DIODE Search Results

dr25 diode specifications

Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Contextual Info: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)

Contextual Info: FEATURES MODEL NO. DS0506 dr • 100-600 MHz ■ 0.6 dB Insertion Loss ■ Handles +25 dBm PIN Diode SP6T ■ 250 nSec Switching Speed ■ Non-Reflective ■ TTL Driver ■ 38 Pin DIP PART IDENTIFICATIO N L ^ 2 0 V T 018 DIA LEAD 2 6 CONT1 ! " 0" 14 3 1 5 7 8 9 11 12 1315 19

MC 790 P

Abstract: 1D-10A
Contextual Info: Æ lltro n 3301 ELECTRONICS WAY. T E L : 407 848-4311 N-CHANNEL ENHANCEMENT MOS FET 4 0 0 V, 1O A , 0 . 5 6 n SDF340 SDF340 dr -CD VDSS 400 V dc VDGR 400 V dc VGS ±20 Vdc Gate-Source Voltage C o n ( i nuous Drain Current Continuous ( T c = 25° C) SCHEMATIC

Contextual Info: General Description of Light Emitting Diodes • Handling Precautions This product is sensitive to static electricity and demands a lot of attention. Please take all possible measures for static electricity and surge solution. ■ Lead Forming Method ; ;

Contextual Info: flâ MICRO EL EC TRON IC S CORP DE | b D W f l f l DGODtlt 4 J ”' T- V / - 2 / Light Emitting Diodes TYPE Vf COLOUR \P nm Red Red Orange Green Yellow Orange 660 700 635 565 585 635 0.30 0.50 1.00 0.50 0,50 1,00 20 20 20 20 20 20 2 3 3 3 3 3 20 20 20 20

DZ2J030

Abstract: dr 25 diode
Contextual Info: DZ2J030 Reference Spice Parameter Total pages page 1 1 Device symbol Product name: DZ2J030 Product type: Zener Diode Parameters *DEVICE=DZ2J030,D * DZ2J030 D model *$ .SUBCKT DZ2J030 A K D1 A K DF DZ K 1 DR V1 1 A 0.002 .MODEL DF D + IS=1.2641E-15 + N=1.0575

2SK1818-M

Contextual Info: 2SK1818-M S IP M O S F U J I P O W E R M O S -F E T p N-CHANNEL ENHANCEMENT TYPE MOS-FET • Features SERIES Outline Drawings • Include fa st recovery diode • High vo ltag e • Low driving p o w e r ■ Applications Gate • M o to r controllers Dram

Contextual Info: PHOTO RELAY TLP595B T IP 5 9 5 B TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595B consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.

TLP3009

Abstract: tlp300
Contextual Info: TLP3009,3010,3011,3012 G aA s IRED a P H O TO -T R IA C TENTATIVE DATA OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. TRIAC DRIVER. SOLID STATE RELAY. The TOSHIBA TLP3009, TLP3010, TLP3011 and TLP3012 consist of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic

dr 25 diode

Abstract: k1 diode Diode DR 25 1800KW S65 Diode
Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 600 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current

TCD126C

Abstract: staggered CCD
Contextual Info: TCD126C The TCD126C is a color contact type CCD linear image sensor. The device is consist of 5 staggered high sensitivity CCD chips. The device contains a row of 14400 photo­ diodes which provide a 400 dot/inch re­ solution across an A3 size paper. By the aid of analog line memories

High Power PIN Diodes

Abstract: UM4000 UM4902 UM4906 UM4001 UM4002 UM4006 UM4010 UM4900 UM4901
Contextual Info: UM4000 / UM4900 HIGH POWER PIN DIODES KEY FEATURES DESCRIPTION Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage. Both series have been fully qualified in high power UHF phase shifters and megawatt peakpower duplexers, accumulating thousands of

diode k1

Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 600 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current

3dd200

Contextual Info: Technische Information / Technical Information Dioden-Module Diode-Modules DD 200 S 65 K1 Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Tvj=125°C Tvj=25°C Tvj=-40°C Dauergleichstrom DC forward current

TLP591B

Abstract: E67349
Contextual Info: TLP591B TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array TLP591B Unit in mm Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver The TOSHIBA TLP591B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected

Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS = 600 V ID25 = 15 A Ω RDS on ≤ 250 mΩ ≤ 250 ns trr IXFC 30N60P IXFR 30N60P Electrically Isolated Back Surface N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings

UM4300

Abstract: UM4301 microsemi sm package UM4302 UM4306 UM4310 UM7300 UM7301 UM7302 UM7306
Contextual Info: UM4300 / UM7300 FOR ATTENUATOR APPLICATIONS O S KEY FEATURES DESCRIPTION series offers lower capacitance. Both diode series are intended for use in linear attenuators operating from HF to beyond 1 GHz. Low distortion is a result of transit time frequencies below 5 MHz.

Contextual Info: PM45502C Silicon N-Channel Power MOS FET Module HITACHI November 1996 Application High Speed Power Switching Features • Equipped with Power MOS FET • Low on-resistance • High speed switching • Low drive current • Wide area of safe operation • Inherent parallel diode between source and drain

Contextual Info: Doc No. TT4-EA-11837 Revision. 3 Product Standards Zener Diode DZ2S2400L DZ2S2400L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J240 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6  Excellent rising characteristics of zener current Iz

TLP598GA

Abstract: relay rs-5
Contextual Info: TLP598GA TENTATIVE TOSHIBA Photocoupler Photo Relay TLP598GA Telecommunication Data Acquisition Measurement Instrumentation Unit in mm The TOSHIBA TLP598GA consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a six

10C3

Abstract: E67349 TLP3503 TLP3503IFT5
Contextual Info: TLP3503 TOSHIBA Photocoupler GaAs IRed & Photo−Triac TLP3503 Triac Driver Programmable Controllers AC−Output Module Solid State Relay Unit in mm The TOSHIBA TLP3503 consists of a zero voltage crossing turn−on photo−triac optically coupled to a gallium arsenide infrared emitting diode in a 8

Contextual Info: TLP598G TOSHIBA Photocoupler Photo Relay TLP598G Telecommunication Data Acquisition Measurement Instrumentation Unit in mm The TOSHIBA TLP598G consists of an aluminum gallium arsenide infrared emitting diode optically coupled to a photo−MOS FET in a six

GVD30503-001

Contextual Info: Preliminary Data - January 1999 GVD30500 SERIES SPRAGUE-GOODMAN ELECTRONICS. INC. WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 25 V min Maximum reverse leakage current (at -20 V) at 25“C: 0.05 pA DC

silicon epitaxial mesa diode

Abstract: GVD1404-001
Contextual Info: Preliminary Data - January 1999 GVD1400 SERIES SPRAfilli-GOODMAN ELECTRONICS, INC. SUPER HYPERABRUPT TUNING VARACTOR DIODES FEATURES SPECIFICATIONS • • • • • • • Reverse breakdown voltage at 10 pA DC at 25°C: 12 V min Maximum reverse leakage current (at -10 V) at 25°C: 0.05 pA DC