DQ003 Search Results
DQ003 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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20L-28L
Abstract: ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
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dq003ics2628ics2628-022ics2628-034+4 | |
100DG
Abstract: 100DJ 100AB 100AC 100BA 100BB 100BC 100CA 100CB 100CC
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dq0037454jntt100dg100dj+8 | |
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Contextual Info: M IC R O N E T IC S 3 ME IN C I a l l l 7 1+2 DQ0033b 2 D r r ^ s v x i IMRO | APPR I CHANGE REV DATE K F e ~a t o t s .e s • U S E F U L F O E . V e R X H-IS-h «ÏCOITCHltOG- IfcATETS- Of» TO 2 0 MHS • O F=f=eE S C H o i c e O F UOS4C. ¿ O O C I O . I |
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dq0033b | |
S15R6
Abstract: s14r6
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s3mbm31dq003t-50-23s14r6+1 | |
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Contextual Info: ELECTRONIC CONCEPTS INC 3^E D 32E57QM DQ0032S 0 IECN \-a s ~ n - o s high voltage metallized polyester capacitors type 4ME12 w rap and fill tubular construction Type 4ME12 is a versatile metallized polyester capacitor that is produced in a wrap and fill, tubular configuration with axial wire leads. Its |
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32e57qmdq0032s4me12710-722-6661//wa// | |
686 6K tantalum
Abstract: capacitor 684k MATSUO 281 202L3502
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22jjfgg0g341686 6k tantalumcapacitor 684k+2 | |
STK10C48Contextual Info: S I MT EK CORP böE D 0274607 □□□□333 EST ISIK STK10C48 SIÎÏ1TEH CMOS nvSRAM High Performance 2K x 8 Nonvolatile Static RAM FEATURES 30,35 and 45ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Hardware s t o r e Initiation |
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stk10c48e74flfl70ddd340 | |
.47j 63vContextual Info: THOMSON COMPONENTS THOMSON PASSIVE MbE D • TD263DS DD0037b T ■ THP TYPE AC / AN MULTILAYER CERAMIC CHIP CAPACITORS /?-PF~û5-& 7 PHYSICAL C H A R A C TER ISTIC S TERM INATIO N Standard: Silver palladium metallization. Can meet reflow solder specifications for 5 sec. @ 260°C. |
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td263dsdd0037b-220pf47j 63v | |
IS28F010
Abstract: IS28F010-45PL
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is28f01q32-pinis28f010-120plis28f010-120t+6 | |
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Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . E R 1A thru E R IE SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER CURRENT - 1.0 Ampere T ± c FEA TU R ES • For su rface mount applications M EC H A N IC A L DATA ■ High tem perature m etallurgically |
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il-s-19500td0g37dq003ss | |
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Contextual Info: ISSI I S 2 8 F 0 1 0 _ 131,072 x 8 CMOS FLASH MEMORY PRELIMINARY NOVEMBER 1995 FEATURES • Flash electrica l bu lk chip-e ra se - O ne seco nd typica l chip-e ra se H igh pe rfo rm an ce - 45 ns m axim um access tim e • C M O S low p o w e r con sum p tion |
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32-pinis28f010-45wiis28f010-45pliis28f010-45ti+6 | |
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Contextual Info: böE D SINTEK CORP • ÖE74flfl7 00D03S0 33Ö H S I K STK10C68-M CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MIL-STD-833/SMD 5962 - 93056 SIIÏITEK FEATURES DESCRIPTION 3 0 ,3 5 ,4 5 and 55ns A c c e s s Tim es 1 5 ,2 0 and 25ns O u tp u t E nable A cce ss |
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e74flfl700d03s0stk10c68-mmil-std-833/smd+1 | |
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Contextual Info: FUJITSU MICROELECTRONICS 3 7 4 cj7b2 0Qafl3bS A 23E D FU JITSU MBM10484A-10 August 1988 Edition 2.0 T -^ t-2 ^ -0 8 16384-BIT BIPOLAR ECL RANDOM ACCESS MEMORY The Fujitsu MBM 10484A is fully decoded 16384-bit E C L read/write random access memory designed for high-speed scratch pad, control and buffer storage |
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mbm10484a-1016384-bit0484a08s-1c+3 | |
marking code P1F
Abstract: qs-002b MARKING P1F M41256HPM12 M41256HPM15 m325
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m41256hxm12jmil-std-883cm41256hxml216-pin+10 | |
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tx 429dContextual Info: HI-8282 ARINC 429 SERIAL TRANSMITTER AND DUAL RECEIVER General Description Applications The HI-8282 is a silicon gate CMOS device for interfacing the ARINC 429 serial data bus to a 16-bit parallel data bus. Two receivers and an independent transmitter are provided. The receiver |
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hi-828216-bithi-8282chi-8282s+3 | |
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Contextual Info: twnrj«¥« € g M i w i i pnH _ EPM 6I2FJ-S/M Pigtailed 1.3 urn Passband Detector M odule Prelim inary Specifications Features • High responsivity at 1300 nm ■ 1550 nm response - 20 dB of 1300 nm response |
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33bdmdbdq00323epm61zfj-s/m33b040b | |
Matsuo 204Contextual Info: m * SOLID-ELECTROLYTE TANTALUM CAPACITORS MATSUO A type cautions •This capacitor is polarized, do not apply reverse voltage. •The sum of peak value of AC and DC voltage should not exceed the rated voltage. •This catalog is designed for providing general information. Please |
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/1000h22jjfdqgg341matsuo 204 | |
16V 100 MF
Abstract: G23-76 Matsuo KAB fuse
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/1000h22jjfdqgg34116v 100 mf+2 | |
oti 64105
Abstract: oti-088
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64-bitoti-64107/64105qd00311b72t4a5+2 | |
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Contextual Info: H ig h P e r f o r m a n c e •■ AS29F200 II 256KX8/128x I6 SV CM OS Flash FFPROM 2 M e g a b it 5V CM OS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 2 S 6 K x 8 o r 1 2 8 K x l 6 • L o w p o w e r c o n s u m p ti o n - 35 mA m a x im u m read c u rre n t |
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as29f200256kx8/128x | |
SSDPAPS0004G1
Abstract: HBM 00-07H intel nand flash pf29f32 SSDPAPS0002G1 317505-003US ssd schematic 16GB Nand flash dual channel intel nand flash memory PF29
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z-p140ssdpaps0002g1ssdpaps0004g1sd54b+10 | |