DPAK PACKAGE SIZE Search Results

DPak Package size

Abstract: DPak Package dimensions TO252-DPAK TO-252 D-PAK package TO252 TO-252 fairchild dpak Package dpak code
Contextual Info: TO-252 DPAK Package Dimensions TO-252 (DPAK) (FS PKG Code 36) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 2002 Fairchild Semiconductor Corporation May 2002, Rev. B1

CSHD12-60C

Abstract: PB CSHD12-60C
Contextual Info: Product Brief CSHD12-60C DPAK 12A, 60V Dual, Common Cathode Schottky Rectifier in the DPAK package Typical Electrical Characteristics Central Semiconductor’s CSHD12-60C is a Schottky rectifier designed for applications requiring a low forward voltage drop.

TR13

Abstract: 339 D-PAK
Contextual Info: Package Details DPAK Rectifier Case Mechanical Drawing Lead Code: Part Marking: Full Part Number Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R4 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Rectifier Case

TRANSISTOR S 838

Abstract: 339 marking code transistor TR13 339 marking code transistor manual
Contextual Info: Package Details DPAK Transistor Case Mechanical Drawing Part Marking: Full Part Number Mounting Pad Geometry Dimensions in mm R3 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Transistor Case Tape Dimensions and Orientation (Dimensions in mm)

thyristor 808

Abstract: TR13 BR 5254
Contextual Info: Package Details DPAK Thyristor Case Mechanical Drawing Part Marking: Full Part Number Lead Code: Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R1 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details DPAK Thyristor Case

Contextual Info: STD95N04 N-CHANNEL 40V - 5.1mΩ - 80A DPAK Planar STripFET MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STD95N04 • ■ ■ Figure 1: Package VDSS RDS on ID Pw 40 V < 6.5 mΩ 80 A (*) 110 W 100% AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252)

std65n55

Contextual Info: STD65N55 N-CHANNEL 55V - 8.0mΩ - 65A - DPAK MDmesh Low Voltage Power MOSFET Target Specification General features Package Type VDSS RDS on ID Pw STD65N55 55 V <10.5 mΩ 65A 110 W • SURFACE-MOUNTING DPAK (TO-252) ■ STANDARD THRESHOLD DRIVE ■ 100% AVALANCHE TESTED

STD40NF06

Contextual Info: STD40NF06 N-CHANNEL 60V - 0.024 Ω - 40A DPAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STD40NF06 60 V <0.028 Ω 40 A TYPICAL RDS(on) = 0.024 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL

Contextual Info: STD45NF75 N-channel 75 V, 0.018 Ω, 40 A DPAK STripFET II Power MOSFET Features Type VDSS RDS on max ID STD45NF75 75 V < 0.024 Ω 40 A(1) 1. Current limited by package • 100% avalanche tested ■ Gate charge minimized 3 1 DPAK Application ■ Switching applications

9902 ST

Abstract: marking code 5 D45NF75 STD45NF75 STD45NF75T4
Contextual Info: STD45NF75 N-channel 75 V, 0.018 Ω, 40 A DPAK STripFET II Power MOSFET Features Type VDSS RDS on max ID STD45NF75 75 V < 0.024 Ω 40 A(1) 1. Current limited by package • 100% avalanche tested ■ Gate charge minimized 3 1 DPAK Application ■ Switching applications

Contextual Info: STD95N04 N-CHANNEL 40V - 5.1mΩ - 80A - DPAK STripFET Power MOSFET Target Specification Package General features Type VDSS RDS on ID Pw STD95N04 40 V <6.5 mΩ 80 A Note 1 110 W 3 • SURFACE-MOUNTING DPAK (TO-252) ■ STANDARD THRESHOLD DRIVE ■ 100% AVALANCHE TESTED

JESD97

Abstract: STD45NF75 STD45NF75T4 D45NF75
Contextual Info: STD45NF75 N-channel 75V - 0.018Ω - 40A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD45NF75 75V <0.024Ω 40A(1) 1. Current limited by package • 100% avalanche tested ■ Gate charge minimized 3 1 DPAK Description This Power MOSFET is the latest development of

STD40NF06

Contextual Info: STD40NF06 N-CHANNEL 60V - 0.024 Ω - 40A DPAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STD40NF06 60 V <0.028 Ω 40 A TYPICAL RDS(on) = 0.024 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL

Contextual Info: STD45NF75 N-channel 75V - 0.018Ω - 40A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD45NF75 75V <0.024Ω 40A(1) 1. Current limited by package • 100% avalanche tested ■ Gate charge minimized 3 1 DPAK Description This Power MOSFET is the latest development of

D45NF75

Abstract: STD45NF75 STD45NF75T4 POWER MOSFET Rise Time 1 ns
Contextual Info: STD45NF75 N-CHANNEL 75V - 0.018 Ω -40A DPAK STripFET II POWER MOSFET TYPE STD45NF75 • ■ ■ ■ VDSS RDS on ID 75 V <0.024 Ω 40 A(*) TYPICAL RDS(on) = 0.018 Ω 100% AVALANCHE TESTED GATE CHARGE MINIMIZED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL

M2003

Contextual Info: Package Reliability Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR TO-251/252 AND REVERSE TO-252 DPAK Stress Sample Size Device Hr./Cyc Condition Total Fails Fail Percentage 85/85 2,006 1,658,704 85_C, 85%RH 0.00 BOND INT 1,280 650,000 200_C + N2

M2003

Abstract: TO252-DPAK
Contextual Info: Package Reliability Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR TO-251/252 AND REVERSE TO-252 DPAK Stress Sample Size Device Hr./Cyc Condition Total Fails Fail Percentage 85/85 1,050 744,704 85_C, 85%RH 0.00 BOND INT 2,800 1,400,000 200_C + N2

pdf 555

Abstract: M2003 TO252-4L
Contextual Info: Package Reliability Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR DPAK TO-252-4L Stress Sample Size Device Hr./Cyc Condition Total Fails Fail Percentage BOND INT 240 120,000 200 °C + N2 0.00 HAST 495 49,500 130 °C, 85 % RH 0.00 Pressure Pot

Contextual Info: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR REVERSE DPAK STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS BOND INT 40 20 000 200 C + N2 FAIL PERCENTAGE 0.00 HAST 82 8200 130 C, 85 % RH 0.00 Power Cycle

Contextual Info: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR DPAK TO-252 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS BOND INT 1840 920 000 200 C + N2 0.00 HAST 5403 540 300 130 C, 85 % RH 0.00 Power Cycle

Contextual Info: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR DPAK TO-252 , IPAK (HVM) STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS 85/85 397 317 000 85 °C, 85 % RH FAIL PERCENTAGE 0.00 BOND INT 20 10 000 200 C + N2

M2003

Contextual Info: Package Reliability Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR TO-251/252 AND REVERSE TO-252 DPAK BWL Stress Sample Size Device Hr./Cyc Condition Total Fails Fail Percentage 85/85 738 738,000 85_C, 85%RH 0.00 BOND INT 80 20,000 200_C +N2

TO252-DPAK

Contextual Info: Package Reliability Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR TO-251/252 AND REVERSE TO-252 DPAK BWL Stress Sample Size Device Hr./Cyc Condition Total Fails Fail Percentage 85/85 738 738,000 85_C, 85%RH 0.00 HAST 1,558 147,600 130_C, 85%RH

Contextual Info: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR DPAK, TO-252, TO-251 STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS BOND INT 40 20 000 200 C + N2 FAIL PERCENTAGE 0.00 HAST 1691 169 100 130 C, 85 % RH