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Catalog Datasheet	Type	Document Tags	PDF
MYXB21200-20GAB Abstract: silicon carbide Contextual Info: SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low R on • High voltage 1200V isolation in a small package	Original	myxb21200-20gab 210oc double1200 silicon carbide	PDF
MYXM21200-20GAB Abstract: silicon carbide Contextual Info: SiC Power MOSFET Double 1200 Volt 20 Amp Hermetic MYXM21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low RDS on • High voltage 1200V isolation in a small package	Original	myxm21200-20gab 210oc o-259 double1200 +1silicon carbide	PDF

Catalog Datasheet

Type

Document Tags

PDF

MYXB21200-20GAB

Abstract: silicon carbide
Contextual Info: SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low R on • High voltage 1200V isolation in a small package

Original

myxb21200-20gab 210oc double1200 silicon carbide

PDF

MYXM21200-20GAB

Abstract: silicon carbide
Contextual Info: SiC Power MOSFET Double 1200 Volt 20 Amp Hermetic MYXM21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low RDS on • High voltage 1200V isolation in a small package

Original

myxm21200-20gab 210oc o-259 double1200 +1

PDF