DOUBLE MATCH TRANSISTOR Search Results

er900

Abstract: capacitor 220 microfarad 220 microfarad capacitor 1N3064 SCELL500 SD1650 CAPACITOR 1000 MICROFARAD capacitor, 1000 microfarad of 1000 microfarad electrolytic capacitor SD1438
Contextual Info: SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER POUT = 60 W MIN. WITH 7 dB MIN GAIN .400 6LFL M169 epoxy sealed ORDER CODE

capacitor 220 microfarad

Abstract: SD1438-02 1 microfarad capacitor 0.1 microfarad capacitor 0.1 microfarad electrolytic capacitor capacitor, 0,1 microfarad 1N3064 SCELL500 SD1650 of 1000 microfarad electrolytic capacitor
Contextual Info: SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER P OUT = 60 W MIN. WITH 7 dB MIN GAIN .400 6LFL M169 epoxy sealed ORDER CODE

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1551 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS Features • • • • • • 850-960 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM DOUBLE STEP INPUT/OUTPUT MATCH

Contextual Info: MS1551 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS Features • • • • • • 850-960 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM DOUBLE STEP INPUT/OUTPUT MATCH COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1551 is designed for 900 MHz cellular radio base station

Contextual Info: Switch, Single-Pole, Double-Throw 2.0—8.0 GHz MASWGM0003-DIE 903231 — Preliminary Information Features ♦ ♦ ♦ ♦ ♦ ♦ 2.0-8.0 GHz Operation 3 dB Insertion Loss Non-Reflective TTL Control Excellent Match on Off Port MSAG Process Description

MASWGM0005-DIE

Contextual Info: Switch, Single-Pole, Double-Throw DC-5.0 GHz MASWGM0005-DIE 903219 — Preliminary Information Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ DC-5.0 GHz Operation 1 dB Insertion Loss 55 dB Isolation Class I ESD TTL Control Excellent Match on Off Port MSAG Process

Contextual Info: /=T S G S -1 H0M S0N ^ 7 # . » » ilL IO T M O t g i S D 1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . • . ■ REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER P o u t = 60 W MIN. WITH 7 dB MIN GAIN

BFG403W

Abstract: 0805CS Series amplifier 900mhz 0805CS 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-006 : T.F. Buss : Jan. 6 1997 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG403W Double Poly

Philips npo 0805

Abstract: 5Ghz lna transistor datasheet BFG425W 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly

power amplifier circuit diagram with pcb layout

Abstract: BFG480W transistor amplifier 3 ghz MGS629 power amplifier circuit diagram with pcb layout 2 BFG400 0805CS TRANSISTOR noise figure measurements philips circuit diagram
Contextual Info: APPLICATION INFORMATION 2.4 GHz low noise amplifier with the BFG480W Philips Semiconductors Application information 2.4 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W is one of the Philips double polysilicon wideband transistors of the BFG400 series.

L05 SMD

Abstract: CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 BFG425W CMP401 BFG400W CMP409 CMP231
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-1025 : T.F. Buss : 10 Dec. 1996 : P.G. Transistors & Diodes, Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W

L05 SMD

Abstract: w05 smd transistor SMD W05 W05 transistor W05 SMD L6 PHILIPS CMP401 CMP281 CMP263 CMP286
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-770 : T. Buss : 20-Jan-00 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG410W Double Poly

transistor bipolar driver schematic

Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.

BFG425W

Abstract: BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
Contextual Info: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz.

BFG425

Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly

MGS731

Abstract: BFG480W MGS732 0805CS BP317
Contextual Info: APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W Philips Semiconductors 900 MHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.

BFG480W

Abstract: 0805CS BP317
Contextual Info: APPLICATION INFORMATION 2 GHz low noise amplifier with the BFG480W Philips Semiconductors 2 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.

micro amplifier 471

Abstract: philips 23 BFG425W BP317 hewlett packard application note 972 stripline pcb
Contextual Info: APPLICATION INFORMATION 900 MHz driver amplifier with the BFG425W Philips Semiconductors Application information 900 MHz driver amplifier with the BFG425W ABSTRACT • Description of the product The BFG425W is one of the Philips double polysilicon wideband transistors of the BFG400W series.

b 772 p

Abstract: CMP265 CMP460 BFG410W CMP230 CMP231 CMP287 CMP452 CMP453 CMP485
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0789 : T. Buss th : 30 of September 97 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG410W update of report RNR-T45-96-B-772

BFG410W

Abstract: Buffer Amplifier Ghz BFG400 BP317 application notes philips rf philips printed circuit board design
Contextual Info: APPLICATION INFORMATION 2 GHz buffer amplifier with the BFG410W Philips Semiconductors Application information 2 GHz buffer amplifier with the BFG410W ABSTRACT • Description of the product The BFG410W, one of the Philips double polysilicon wideband transistors of the BFG400 series.

Contextual Info: ^E.m.i-Condu.cko'i ^Pioaacti., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the

SAW resonator 433MHz

Abstract: murata ceramic filter 455 kHz B3555 BB535 HC49SMD LQFP44 SFE10 TH7110 433mhz resonator MURATA SAW filter code
Contextual Info: TH7110 315/433MHz FSK/FM/ASK Receiver Features ! ! ! ! ! ! ! ! Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator

BB142

Abstract: 43p transistor BFG425W 1K 1608 2K 0402 BFG410W TRANSISTOR noise figure measurements tdk VCO BFG425W APPLICATION 0402_PHILIPS
Contextual Info: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-45-98-B-0827 : Haris Duric & Robert Cloudt : 16 December 1998 : DSC-N, Development CDMA CELLULAR VCO WITH THE BFG425W, BFG410W AND VARACTOR BB142

fsk demodulation source code in C

Abstract: B3570 BB535 HC49SMD LQFP44 SFE10 TH7111 fsk demodulator khz QCC8C
Contextual Info: TH7111 868/915MHz FSK/FM/ASK Receiver Features ! ! ! ! ! ! ! ! Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator