DOUBLE INFRARED SENSOR Search Results

Contextual Info: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

Contextual Info: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

TEMD1000

Abstract: TSMF1000 TSMF1020 TSMF1030 TSMF1040
Contextual Info: TSMF1000/1020/1030/1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF1000 TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

Contextual Info: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic

MAX160

Abstract: TSMF4710-GS08 TSMF4710-GS18
Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic

Contextual Info: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic

Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF4710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: VSMB1940X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, molded in clear, untinted 0805 plastic

TSMF3710

Abstract: TSMF3710-GS08 TSMF3710-GS18
Contextual Info: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

TSMF3710

Abstract: TSMF3710-GS08 TSMF3710-GS18
Contextual Info: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant

Contextual Info: TSMF3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSMF3700 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology in a miniature PL-CC-2 SMD package. It has been designed to meet the increasing demand

VSMB1940X01

Contextual Info: VSMB1940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • • 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power

VSMB1940X01

Abstract: J-STD-020
Contextual Info: VSMB1940X01 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • • 21531 DESCRIPTION VSMB1940X01 is an infrared, 940 nm emitting diode in GaAlAs Double Hetero technology with high radiant power

Contextual Info: Infrared Emitting Diode Description The H E7601SG is a 770 nm band GaAIAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

"rain sensor"

Abstract: rain SENSOR TSRF9000 "Automotive rain sensor" IR rain light sensor TSRF9000-GS44 rain sensor automotive rain light sensor "rain sensor" application
Contextual Info: TSRF9000 / 22079857 Vishay Semiconductors IR Rain Sensor Module Description Infrared detector module for automotive rain sensor application. Infrared emitting diodes in GaAlAs on GaAlAs double hetero DH technology in chip on board (COB) assembly technique perform in conjunction with a

Hitachi DSA002727

Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power

HE7601SG

Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode ODE-208-996B Z Rev.2 Mar. 2005 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power

HE7601SG

Abstract: a 770 C-239
Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features • High efficiency and high output power

Contextual Info: HE7601SG ODE2059-00 M Rev.0 Aug. 01, 2008 GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

Hitachi DSA0087

Abstract: HE7601SG
Contextual Info: HE7601SG GaAlAs Infrared Emitting Diode ADE-208-996 Z 1st Edition Dec. 2000 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.