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TFK S 417 T Abstract: tfk s 417 TFK U 3201 M tfk 830 tfk 417 500C AN569 MTM24N45E tfk 145 TFK A 6 Contextual Info: Order this data sheet by MTM24N45E/D IMOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s TMOS Data sheet MTM24N45E E-FET ~,., \ r High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.	Original	mtm24n45e/d mtm24n45e do2510 97a-02 +10o-204ae tfk s 417 t tfk s 417 tfk u 3201 m tfk 830 tfk 417 500c an569 tfk 145 tfk a 6	PDF

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TFK S 417 T

Abstract: tfk s 417 TFK U 3201 M tfk 830 tfk 417 500C AN569 MTM24N45E tfk 145 TFK A 6
Contextual Info: Order this data sheet by MTM24N45E/D IMOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s TMOS Data sheet MTM24N45E E-FET ~,., \ r High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.

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mtm24n45e/d mtm24n45e do2510 97a-02 +10

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