DO-5 PACKAGE MATERIAL Search Results

fdh900

Abstract: FD700 BAY74 BAY82 FD777 FDH600 FDH666 FDH999 do7 15
Contextual Info: NATL SEMICONO D IS C R E TE HE D t.5 G 1 1 3 0 I Computer Diodes Glass Package (Continued) V rrm •r vF D evice Package Vr No. V Min BAY74 DO-35 BAY82 FD700 No. FD777 nA @ Max V 50 100 DO-7 15 DO-7 30 DO-7 15 £ T-01-01 c I 'a mA pF Max *rr ns Max Test

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . DIODES 5K ASMC Series 5KASMC Series of Surface-Mount PAR Transient Voltage Suppressors Combines 5 kW High Surge Capability with + 185 °C Operating Junction Temperature in DO-214AB Package KEY BENEFITS • SMC DO-214AB package

Contextual Info: esa Micmsemi Ireland B U Progress P ow ered b y Technology 1N4148-1 ESA QUALIFIED FEATURES • • • • Qualified to ESA/SCC 5101/023 Metallurgical Bond DO-35 Package Hermetically Sealed Glass Package ^ 1 .5 3 /2 .2 ^ _ 12.7min MAXIMUM RATINGS Operating Temperature:

1N4938

Abstract: FDH444 1N3070 1N462A 1N463A FDH400 High voltage diodes
Contextual Info: Switching Diodes High Voltage Diodes G lass Package V RRM D evice No. P ackage No. (V) (nA) Min Max @ V V F R (V) (V) @ 'f (m A) C ‘rr (PF) (ns) Te st C ond. P roce ss No. Max Max 1N3070 DO-35 200 100 175 1 100 5 50 (Note 1) 1J 1N4938 DO-35 200 100 175

PBP205

Abstract: PBL405 IN4007 PBP203 Fema Electronics PB101M IN5822 PB157M IN5400 712 PB104M
Contextual Info: .5537299 □5 FEMA ELEC TR O N IC S D E | 3 5 3 7 5 ^ C OR P 02E 00014 D Y - ò t ~ / 3 / - 1 SILICON RECTIFIERS Type Max V RPR Max V RMS Max V DCB Type Max V RPR Max V RMS Max V DCB 6.0 AMPERES Package: R6 1.0 AMPERE Package: DO-41 IN4001 50 35 50

l2k Diodes

Abstract: zener diode 1N961 1N4733 zener diode 1N52 diode zener 182 lN5349 zener diode 182 1N751 1N752 1N754
Contextual Info: SEMICONDUCTORS INC DTE D | 013bb5D □□□□2LIÖ 4 | °? Zener Diodes. 0,4 W. 1N751 Series. 400 m W Glass Zener Diodes in DO-35 Package (TA = 25 °C . Outline : 5 Nominal Zener Voltage V ,a t l2I Type Maximum Zener Impedance at l2T in) 17 11 7 (V) 5 .1

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT N /A RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 3 2 - , N /A ALL RIGHTS RESERVED. LOC DIST DF DO REVISIONS LTR A 1, DESCRIPTION DATE REV PER OH 1 4 —0 1 4 5 —05 DWN APVD AA DM 03 -0 5 TYCO PART NO. AND DATE CODE INK STAMPED ON PACKAGE.

Contextual Info: REVISION BJ DO NOT SCALE FROM THIS PRINT NOTES: 1. C REPRESENTS A CRITICAL DIMENSION. 2. PARTS MAY BE CUT TO POSITION. 3. MAXIMUM CUT FLASH: .010[0.25]. 4. MINIMUM PUSHOUT FORCE: 1.0 LB. 5. TERMINALS TO BE SHEARED TO MEET DIMENSION SPECIFICATION. 6. LAYER PACKAGE 2 - 4 POSITIONS AND TUBE 5 - 50 POSITIONS.

LTC3101

Contextual Info: REVISION BP DO NOT SCALE FROM THIS PRINT NOTES: 1. REPRESENTS A CRITICAL DIMENSION. C 2. PARTS MAY BE CUT TO POSITION. 3. MAXIMUM CUT FLASH: .010[0.25]. 4. MINIMUM PUSHOUT FORCE: 1.0 LB. 5. TERMINALS TO BE SHEARED TO MEET DIMENSION SPECIFICATION. 6. LAYER PACKAGE 2 - 4 POSITIONS AND TUBE 5 - 50 POSITIONS.

Contextual Info: REVISION BG DO NOT SCALE FROM THIS PRINT NOTES: 1. C REPRESENTS A CRITICAL DIMENSION. 2. PARTS MAY BE CUT TO POSITION. 3. MAXIMUM CUT FLASH: .010[0.25]. 4. MINIMUM PUSHOUT FORCE: 1.0 LB. 5. TERMINALS TO BE SHEARED TO MEET DIMENSION SPECIFICATION. 6. LAYER PACKAGE 2 - 4 POSITIONS AND TUBE 5 - 50 POSITIONS.

200B

Abstract: 93AA76 93AA86 DK-2750 RG41
Contextual Info: 21130DBook Page 1 Tuesday, July 7, 1998 3:54 PM 93AA76/86 8K/16K 1.8V Microwire Serial EEPROM FEATURES DIP Package 2 3 4 8 VCC 7 6 5 PE ORG 93AA76/86 1 8 VSS SOIC Package CS CLK DI DO 1 2 3 4 7 6 5 VCC PE ORG VSS BLOCK DIAGRAM VCC VSS DESCRIPTION The Microchip Technology Inc. 93AA76/86 are 8K and

D3436

Abstract: SN74ALS229B r152d
Contextual Info: SN74ALS229B 1 6 x 5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY D 3436, M A H C H 1990 DW OR N PACKAGE CTOP VIEW Independent Asynchronous Inputs and Outputs OE [ FULL-2 [ FULL [ LDCK [ DO [ 16 Words by 5 Bits Data Rates From 0 to 40 MHz Fall-Through Time . . . 14 ns Typ

Contextual Info: REVISION BL DO NOT SCALE FROM THIS PRINT NOTES: 1. C REPRESENTS A CRITICAL DIMENSION. 2. PARTS MAY BE CUT TO POSITION. 3. MAXIMUM CUT FLASH: .010[0.25]. 4. MINIMUM PUSHOUT FORCE: 1.0 LB. 5. TERMINALS TO BE SHEARED TO MEET DIMENSION SPECIFICATION. 6. LAYER PACKAGE 2 - 4 POSITIONS AND TUBE 5 - 50 POSITIONS.

LTC3101

Contextual Info: REVISION BQ DO NOT SCALE FROM THIS PRINT NOTES: 1. REPRESENTS A CRITICAL DIMENSION. C 2. PARTS MAY BE CUT TO POSITION. 3. MAXIMUM CUT FLASH: .010[0.25]. 4. MINIMUM PUSHOUT FORCE: 1.0 LB. 5. TERMINALS TO BE SHEARED TO MEET DIMENSION SPECIFICATION. 6. LAYER PACKAGE 2 - 4 POSITIONS AND TUBE 5 - 50 POSITIONS.

82-5588-RFX

Contextual Info: 82-5588-RFX NOIES» 1. 2. 3. 4. 5. 6 REVISIONS REV DRAWING NO. BRASS BODY, NICKEL PLATED. PBT POLYESTER INSULATOR. GOLD PLATED, PHOSPHOR BRONZE CONTACT, . 000003 PACKAGE IN 999-375. DO NOT SCALE THIS DRAWING. UNLESS OTHERWISE SPECIFIED, ALL DIMENSIONS ARE AFTER PLATING.

GENERAL SEMICONDUCTOR UJ

Contextual Info: IMICÜNDUCTDR tm S3A - S3M 0.108 2.743 Features • Low profile package. • Glass passivated junction. SMC/DO-214AB COLOR BAND DENOTES CATHODE 3.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings* T . = 2 5 °C unle ss o th e rw ise noted Parameter

MA2C719

Abstract: MA719
Contextual Info: Schottky Barrier Diodes SBD MA2C719 (MA719) Silicon epitaxial planar type For high-frequency rectification Unit : mm φ 0.45 max. COLORED BAND INDICATES CATHODE 1 0.2 max. • DO-34 (DHD) package, allowing to rectify under (IF(AV) = 500 mA) condition • Allowing high-density mounting (5 mm pitch insertion)

Variable capacitance diodes

Abstract: S0068 BB909A BB909B 01DS3 glass diode green band
Contextual Info: Philips Semiconductors Product specification VHF variable capacitance diodes BB909A; BB909B FEATURES • Excellent linearity • Matched to 2.5% @ • Hermetically sealed leaded glass SOD68 DO-34 package r 5— H flT l Ir~ = 3 — M — M A M 234 • C28: 2.9 pF; ratio: 13.5

NPD5566

Abstract: npd5565 NPD5566 Dual jfets 2N6485 2N3955 NATIONAL SEMICONDUCTOR NP05564 npds5564 2N5565 2N5906 NPD8303
Contextual Info: Dual JFETs bSQ1130 DO^^SDS bSO • NSCS NATL SEMICOND DISCRETE N Channel Vp Device G* (nimho) (V) Min Max M in M ax V q s i -2 VOS (m V) M ax Drift (jxV/C) A V es Max Match G* Match % % •dss Package 2N3955 1 4.5 1 3 10 25 5 5 TO-71 2N3956 1 4.5 1 3 15

31-221-75RFX

Abstract: 500C
Contextual Info: 31-221-75RFX NOTES» DRAWING NO. THIRO ANCLE PRQj . 1. BRASS BODY, NICKEL PLATED. 2. DELRIN INSULATOR. 3. GOLD PLATED, PHOSPHOR BRONZE CONTACT, . 000003. 4. PACKAGE IN BAG # 9 9 9 -3 1 3 . 5. DO NOT SCALE THIS DRAWING. 6 . UNLESS OTHERWISE SPECIFIED, ALL DIMENSIONS ARE AFTER PLATING.

MA188

Abstract: MA2C188 panasonic ma188
Contextual Info: Switching Diodes MA2C188 MA188 Silicon epitaxial planar type Unit : mm φ 0.45 max. COLORED BAND INDICATES CATHODE 1 0.2 max. 13 min. For high speed and high voltage switching, small-power rectification • Features 2.2 ± 0.3 • Small glass type (DO-34) package, allowing to insert into a 5 mm

82-101-RFX

Abstract: adaptor
Contextual Info: 82-101-RFX NOTES; REVISIONS DRAWING NO. BRASS BODY, NICKEL PLATED. 2 . TEFLDN INSULATOR. 3. GOLD PLATED, PHDSPHDR BRONZE CONTACT, . 0 0 0 0 0 3 4. PACKAGE IN 9 9 9 -3 8 0 . 5. UNLESS OTHERWISE SPECIFIED, ALL DIMENSIONS ARE AFTER PLATING. 6. DO NOT SCALE THIS DRAWING.

QE32

Abstract: SN74ALS233B D3487 CT16
Contextual Info: SN74ALS233B 16x5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES D3487, MARCH 1990 Independent Asychronous Inputs and Outputs DW OR N PACKAGE {TOP VIEW 16 Words by 5 Bits Each OE[ FULL-1 [ FULL [ LD C K[ DO [ D 1[ D2 [ D 3[ 04 [ GND[ Data Rates From 0 to 40 MHz

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . RECTIFIERS VSSAF3L45 and VSSAF5L45 45 V TMBS Rectifiers in Low-Profile SlimSMA Package KEY BENEFITS • High current density –– 3 A and 5 A forward currents –– SlimSMA DO-221AC package with typical height of 0.95 mm