DO-34 PACKAGE Search Results

Contextual Info: DATA SHEET BAV21 FAST SWITCHING DIODES VOLTAGE 200 Volts POWER 500mWatts DO-34/DO-35 Unit: inch mm FEATURES DO-34 .017(0.42)TYP. 1.02(26.0)MIN. • Fast switching Speed. • Electrically ldentical to Standerd JEDEC • High Conductance DO-34 .106(2.9)MAX.

Contextual Info: BZX55C* 500mW Zener Diodes FEATURES 500mW,DO-35 . BZX55C. series is for 500mW,DO 35 or DO-34 DO 34 package . Zener voltage regulator diodes . Hermetically sealed glass silicon zener diodes . complete voltage range_2.7 to 75volts We declare that the material of product

SCS133MT

Contextual Info: SCS133MT 0.15A , 80V Hermetically Sealed Glass Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DO-34 FEATURES        Fast Switching Device TRR <4.0 nS DO-34 Package (JEDEC DO-204)

JEDEC do-204

Abstract: 1N4448M 1N4148M do-204 1N914BM
Contextual Info: 1N4148M/1N4448M/1N914BM Pb 300mW Hermetically Sealed Glass Fast Switching Diode RoHS COMPLIANCE DO-34 Features — — — — — — — — — Fast switching device TRR<4.0nS DO-34 package (JEDEC DO-204) Through-hole device type mounting Hermetically sealed glass

1ss133m

Contextual Info: 1SS133M Pb 300mW Hermetically Sealed Glass Switching Diode RoHS COMPLIANCE DO-34 Features ­ ­ ­ ­ ­ ­ ­ ­ ­ Fast switching device TRR<4.0nS DO-34 package (JEDEC DO-204) Through-hole device type mounting Hermetically sealed glass Compression bonded construction

1ss133m

Abstract: do-204
Contextual Info: 1SS133M Pb 300mW Hermetically Sealed Glass Switching Diode RoHS COMPLIANCE DO-34 Features — — — — — — — — — Fast switching device TRR<4.0nS DO-34 package (JEDEC DO-204) Through-hole device type mounting Hermetically sealed glass Compression bonded construction

BAW76

Abstract: BAW76M LLBAW76
Contextual Info: SynSEMi 5YH5EMI SEMICONDUCTOR_ BAW76 BAW76M LLBAW76 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAW76 Device Electrical Characteristics

BAY71

Abstract: LLBAY71
Contextual Info: SynSEMi 5YH5EMI SEMICONDUCTOR_ BAY71 BAY71M LLBAY71 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAY71 Device Electrical Characteristics

MTZJ 188

Abstract: MTZJ24V diodes zener 33,64 MTZJ SERIES ZENER DIODES MTZJ11V
Contextual Info: MTZJ SERIES Pb RoHS COMPLIANCE 500mW Hermetically Sealed Glass Zener Diodes DO-34 Features — — — — — — — — — Zener voltage range 2.0 to 39 volts DO-34 package JEDEC DO-204 Through-hole device type mounting Hermetically sealed glass Compression bonded construction

IR5 20v

Abstract: BAW62 BAW62M LLBAW62
Contextual Info: SynSEMi 5YN5EMI SEMICONDUCTOR_ BAW62 BAW62M LLBAW62 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAW62 Device Electrical Characteristics

mtzj 220

Contextual Info: MTZJ SERIES Pb RoHS COMPLIANCE 500mW Hermetically Sealed Glass Zener Diodes DO-34 Features ­ ­ ­ ­ ­ ­ ­ ­ ­ Zener voltage range 2.0 to 39 volts DO-34 package JEDEC DO-204 Through-hole device type mounting Hermetically sealed glass Compression bonded construction

MTZJ SERIES ZENER DIODES

Abstract: diode zener mtz MTZJ 188 MTZJ MTZJ10 MTZJ11 MTZJ12 MTZJ13 MTZJ15 MTZJ16
Contextual Info: MTZJ SERIES Pb RoHS COMPLIANCE 500mW Hermetically Sealed Glass Zener Diodes DO-34 Features — — — — — — — — — Zener voltage range 2.0 to 39 volts DO-34 package JEDEC DO-204 Through-hole device type mounting Hermetically sealed glass Compression bonded construction

Contextual Info: Silicon Switching Diode DO-34 Glass Package 1N4534 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. Features DO-34 Glass Package • Six sigma quality • Metallurgical^ bonded

1N916

Abstract: 1N916M LL916
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N916 1N916M LL916 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics Symbol t a = 25°c unless otherwise noted.) Parameter Lim its Test C ondition

1N4148 Fast Switching Diode

Contextual Info: 1N4148/1N4448 DO-34 High-speed switching diode Features 1. High reliability 2. High speed (trr≤4 ns) 3. DO-34 Package Applications Extreme fast switches Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM

Contextual Info: 1N4148/1N4448 DO-34 High-speed switching diode Features 1. High reliability 2. High speed (trr≤4 ns) 3. DO-34 Package Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions Symbol

RD10JS

Abstract: RD11JS RD12JS RD13JS RD15JS RD16JS RD39JS 2JS marking NEC RD4.7JS RD5.1JS
Contextual Info: DATA SHEET ZENER DIODES RD4.7JS to RD39JS DO-34 Package Low noise, Sharp Breakdown characteristics 400 mW Zener Diode DESCRIPTION NEC Type RD [ ] JS series are DHD Double Heatsink Diode construction Mini Package (DO-34; Body length 2.4 mm Max.) possessing

Ic 9148

Abstract: IC 4614 1N4680 J 1N4679 U 4614 B 1N4615-1
Contextual Info: Microsemi Zener Regulator Diodes P art N um ber i M icrosem i D ivision W atertow n JAN1N4531 W atertow n JAN TX1N 4531 JAN TXV1N 4531_ W atertow n Package O utline Type Mil Spec DO-34 STD 116 DO-34 STD 116 PO -34 STD 116 P o w er ¡ V z Data Sheet ID

MBG453

Abstract: S0068 BAS15
Contextual Info: Philips Semiconductors Product specification High-speed diode BAS15 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD68 DO-34 package The BAS15 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34)

LL4447

Abstract: 1N4447 1N4447M
Contextual Info: S yn S E M i 5YM5EMI 5EMIC0HDUCT0R_ 1N4447 1N4447M LL4447 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics Symbol t a = 25°c unless otherwise noted.) Parameter Lim its Test Condition

GDZJ

Abstract: GDZJ56
Contextual Info: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-34/DO-35 500 mWatts POWER Unit: inch mm FEATURES DO-34 .017(0.42)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes

zener 6c

Abstract: GDZ56 8A220 Zener 13A
Contextual Info: DATA SHEET GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-34/DO-35 500 mWatts POWER Unit: inch mm FEATURES DO-34 .017(0.42)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes

marking AB2

Abstract: diode zener 1N 398 nec 2563 7es marking RD15ES RD10ES RD11ES RD12ES RD13ES RD16ES
Contextual Info: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.

NEC C 324 C

Abstract: marking 222 zener diode MARKING AB2 zener diode ab RD10ES2 7es marking NEC zener diode 35 series RD11ES zener rd9.1esb2 RD15ES
Contextual Info: DATA SHEET ZENER DIODES RD2.0ES to RD39ES 400 mW DHD ZENER DIODE DO-34 DESCRIPTION NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.