DO-203AB PACKAGE Search Results

1N3209

Contextual Info: 1N3209 100V 15A Std. Recovery Diode In A DO-203AB DO-5 package 4.87 Diodes Si. Page 1 of 1 Enter Your Part # Home Part Number: 1N3209 Online Store 1N3209 Diodes 100V 15A Std. Recovery Diode In A DO-203AB (DO-5) Transistors package Integrated Circuits Optoelectronics

Contextual Info: VISHAY SEMICONDUCTORS www.vishay.com Rectifiers Application Note Mounting Instructions for DO-203AA / DO-203AB Diodes By Kevin Liu This application note introduces Vishay´s DO-203AA DO-4 and DO-203AB (DO-5) diodes and provides instructions for mounting them to a heat sink.

1N6097

Contextual Info: 1N6097 thru 1N6098R Naina Semiconductor Ltd. Schottky Power Diode, 50A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

MBR7545

Contextual Info: MBR7545 thru MBR75100R Naina Semiconductor Ltd. Schottky Power Diode, 75A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

1N5832

Contextual Info: 1N5832 thru 1N5834R Naina Semiconductor Ltd. Schottky Power Diode, 40A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

TO-208AA

Abstract: DO-203AB TO208AA scr 16RIA100 DO-205AA DO-8 diode 70HFR60 ST300C12C0 70HFR120 TO208AC scr 106-1
Contextual Info: 2015-2012:QuarkCatalogTempNew 9/20/12 5:44 PM Page 2015 25 Diodes, Thyristors and Insulated Gate Bipolar Transistors IGBT 80-90 Amp RoHS DO-203AB (DO-5) INT-A-Pak VFM @ 25°C VRRM @ TC (°C) Package EACH 70079025 70078671 70078674 70078774 70078771 70078775

MBR6045

Contextual Info: MBR6045 thru MBR60100R Naina Semiconductor Ltd. Schottky Power Diode, 60A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

1N5826

Contextual Info: 1N5826 thru 1N5828R Naina Semiconductor Ltd. Schottky Power Diode, 15A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

MBR7520

Contextual Info: MBR7520 thru MBR7540R Naina Semiconductor Ltd. Schottky Power Diode, 75A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

MBR8020

Contextual Info: MBR8020 thru MBR8040R Naina Semiconductor Ltd. Schottky Power Diode, 80A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

MBR8045

Contextual Info: MBR8045 thru MBR80100R Naina Semiconductor Ltd. Schottky Power Diode, 80A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

MBR6020

Contextual Info: MBR6020 thru MBR6040R Naina Semiconductor Ltd. Schottky Power Diode, 60A Features • • • • • Fast Switching Low forward voltage drop High surge capability High efficiency, low power loss Normal and Reverse polarity DO-203AB DO-5 Maximum Ratings (TJ = 25oC, unless otherwise noted)

VSK51

Contextual Info: MICROSEMI CORP/ SbE D MICRO / • bllS'iO? 000142S 3^1 MICRO QUALITY / 60 Amp Schottky VSK51 i h úl T=02>-Z1 SEMICONDUCTOR. INC 150X Max Tj 45 Volts VRRM .60 Volts VF @ lF = 60 Amps @ 125°C. Very Fast Switching Speed Standard DO-5 Stud Mount Case JEDEC Package 203AB formerly DO-5

Contextual Info: MICRO QUALITY / SE M ICO ND UC TO R , INC. 50 Amp Epitaxial High Efficiency Rectifiers Low Thermal Resistance Extremely Low Leakage at High Temperature High Surge Capability Very Fast Switching Speeds Glass Passivated Standard D05 Case JEDEC Package 203AB fo rm e rly DO-5

MUR7015

Abstract: ms 0840
Contextual Info: MUR7015 SILICON RECTIFIER-VERY FAST SWITCHING PACKAGE STYLE DO-5/D0-203AB DESCRIPTION: The MUR7015 is Designed for General Purpose Very Fast Switching Power Supply Applications. MAXIMUM RATINGS O 70 A AVG @ TC = 125 C IF 150 V VR O O O O TJ -55 C to +175 C

40HFL40S02

Abstract: 95HQ015 DO-203AB IRFP460
Contextual Info: Bulletin PD-2.272 rev. B 11/02 95HQ015 95 Amp SCHOTTKY RECTIFIER TO-203AB DO-5 Description/ Features Major Ratings and Characteristics Characteristics 95HQ015 Units IF(AV) Rectangular 95 A 15 V IFSM @ tp = 5 µs sine 7500 A VF @ 95 Apk, TJ = 75°C 0.39 V

Contextual Info: M IC R O Q U A L IT Y / SEM IC O N D U C TO R . INC. 70 Am p HV S chottky Rectifier 50, 60, 80, & 100 Volt VRRM 0.86 Volts at lF = 70 Amps Low Leakage at High Temperature High Surge Capability D05 Package JEOEC Package 203AB fo rm e rly DO-5 DIM. A B C D

VSK71

Contextual Info: MICRO QUALITY / 75 Amp Schottky v s k 71, v s k 72 SE M ICO ND UC TO R , INC. 175 c m ax Ta 50 Volts and 60 Volts VRRM 175°C Junction Operating Temperature Lowest lR in the Industry Exceptional dv/dt: 2000 V /^s D05 Package JEDEC Package 203AB fo rm e rly DO-5 _

LN2576

Abstract: str 6626 do8m DS22-08A 10M80 DS22A ln3491 40HF50 lN540 06020L
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A 5 4.0 4.0 4.0 4.5 4.5 4.5 10 15 20 25 30 35 5.0 5.0 5.0 5.0 5.0 5.0 5.0 S.O S.O S.O S.O S.O S.O S.O S.O S.O 6.0 6.0 6.0 6.0 6.0 B.5 B.5 B.5 B.5 8.5 8.5 8.5 9.5 9.5 9.5 9.5 9.5 45 50 55 60 S5

ln2054

Abstract: 70H40 70H20A 70H30A 70H80 70H40A 5MO 165 lN3261 20M20 70Ma20
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number 10 Max A VRRM IFSM (V) (A) Silicon Rectifiers, 10 5 10 15 20 25 30 KG01420SX KG01421SX lN2789 KG01422SX OS35•08A OS35·02A OS35·04A 55HQ020 lN2128 lN2128A 50 50 50 50 51 52 52 60 60 60 ~~~~~~OSX ~g

J1587

Abstract: 20331 2N150
Contextual Info: International Schottky Diodes lö R Rectifier VFM @ lFM Part Number VRRM V 1FAV @ TC (A) (C) 25°C (mA) Um @ eAS Ur H ) (A) Fax on Demand Number vrwm 2S°C (mA) Max Tj (°C) Notes Case Outline Key Through-Hole Packages 30 25 105 0.8ft 40 6 250 125 -> 7 14

SSIE1420

Abstract: SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM •FSM Max A 00 (A) 00 VF IF @ IR Test (A) IR VR 25 °C @ (A) Test (V) (A) @ T2 Test CO 'Opar Max (°C) Package Style General-Purpose, lo >= 25 A (Cont'd) . . . .5 . . . .10

DS35-02A

Abstract: R4140260 EU555B SG63S SG63R SR60L2S SR60L ASEA Brown SR6004 sg-63s
Contextual Info: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM IFSM Max A 00 (A) 00 IR IF VF @ Test (A) IR VR 25 °C @ Test (A) (V) T2 @ Test (A) (°C) T Oper Package Style Max (°C) General-Purpose, lo >= 50 A (Cont'd) 5 10 DS35-02A DS35-04A

MHT10P10

Abstract: SM 8002 C NS 8002 1151
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D fe.3t.7254 00*12474 b • MOTb MOTOROLA SEM IC O N D U C TO R i TECHNICAL DATA M H T10P10 Discrete Military Products Suffixes: HX, HXV P o w e r Field-Effect T ra n sisto r Processed per MIL-S-19500/547 P-Channel Enhancement-Mode