DO-12 PACKAGE Search Results

SV 045

Abstract: DN961 DNB61 DNB64 DN664
Contextual Info: /IT SGS-THOMSON raoœmiOT «! GENERAL PURPOSE & INDUSTRIAL ^ 7# HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779b CB-450 STANDARD RECTIFIER DIODEES Type See note Package 0.23 0.23 12-15 12-15 DO 8 0.6 0.16 30-15 DO 9 1 0.6 0.1 0.07 3.5 ± 10 %

sm58a

Abstract: DO215AA EIA 481-C RGP10E DO-221
Contextual Info: Packaging Information www.vishay.com Vishay General Semiconductor Packaging Information PACKAGING ORDERING CODE PREFERRED ANTI-STATIC PACKAGE CODE PACKAGE CODE 51 PACKAGING DESCRIPTION Bulk 52, 52T P DO-214AA SMB /DO-215AA (SMBG), 12 mm tape, 7" diameter plastic reel

SRA255

Contextual Info: MCC 12 AMPERE I DO-4 1N1199A 1N1200A 1N1202A 1N1204A 1N1206A 1N3671A 1N3673A 50 100 200 400 600 800 1000 Package Outline Pg. A-9 12 12 12 12 12 12 12 150 150 150 150 150 150 150 240 240 240 240 240 240 240 3000 2500 2000 1500 1000 1000 1000 1.35 1.35 1.35

Contextual Info: Packaging Information www.vishay.com Vishay General Semiconductor Packaging Information PACKAGING ORDERING CODE ANTI-STATIC PREFERRED PACKAGE CODE PACKAGE CODE 51 PACKAGING DESCRIPTION Bulk 52, 52T P DO-214AA SMB /DO-215AA (SMBG), 12 mm tape, 7" diameter plastic reel

D0213AB

Abstract: DO-213AB MELF D0213-AB
Contextual Info: PACKAGING DATA Surface Mount Products BULK PACK PACKAGE QUANTITY PER CONTAINER PLASTIC BAGS VIALS DO-213AA MELF, LL34,SOD-80 5,000 500 DO-213AB (MELF, LL41) 5,000 500 TAPE & REEL PACKAGE TAPE WIDTH (MM) REEL SIZE (INCHES) 7 2,000 8 13 10,000 7 1,500 12 13

Contextual Info: HVGT HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage DO-415 diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. Features

Contextual Info: DO-34 #3008 3-10-97 1/27/99 1:12 PM Page 1 PR Transient Voltage Suppressor Axial Lead ESD Protection Bussmann DO-34 transient voltage suppressors provide electrostatic discharge (ESD) protection in telecom, data processing, and many other applications. Properly applied, this

CT10

Abstract: DKV6510-12
Contextual Info: DKV6510-12 SILICON HYPERABRUPT VARACTOR DIODE DESCRIPTION: The ASI DKV6510-12 is an Ion Implanted Silicon Hyperabrupt Varactor Diode Designed for Octave Tuning up to 500 MHz. FEATURES INCLUDE: PACKAGE STYLE DO-7 • Large Tuning Ratio – 14:1 Typ. • High Q – 700 Typ.

Contextual Info: 4 PART NO. 3 2 1 REVISIONS CA-XXDHDSR-11-X LTR A B C D DESCRIPTION INITIAL RELEASE SEE DO 3951 SEE DO 4011 SEE DO 6644 DATE 4-4-00 5-12-00 4-25-08 CLW CLW CP APPROVED A.J. A.J. A.J. D A B CONTACT 1 C 5.9 .23 7.9 .31 CA-XXDHDSR-11-X NUMBER OF CONTACT POS 12.5

ASP-21981-03

Contextual Info: ASP-21981-03 NOTES: 1. 2 0 0 ' -.015 J-.010 1. USE T S M -50-D H U BODY. 2. DO NOT FILL POSITIONS 2, 3, 5, 6, 8, 9, 11, 12, 14, 15, 17, 18, 20, 21 AND 24. 12 POS x .100 = FILLED 02 06 08 12 14 18 20 3. PARTS TO BE LAYER PACKAGED. 4. <C> REPRESENTS A CRITICAL DIMENSION.

1N750

Abstract: 1N751 1N752 1N753 1N759 1N746 1N747 1N748 1N749 1n746 cdil
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON ZENER DIODES 1N746 to 1N759 DO-35 400mW Hermetically Sealed Glass Package Zener Diodes ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT ZV 3.3 to 12 V Zener Voltage

ASP-18333

Abstract: ASP-183
Contextual Info: A SP -18333-03 NOTES: 1. DO NOT FILL POSITIONS 03, 04, 07, 08, 09, 10, 11, 12, 13, 14 & 15. 2. PARTS TO BE BULK PACKAGED. 1. 0 0 0 ± 10 POSITIONS x .100 04 08 10 12 14 FILLED 00 REF .200 REF UNFILLED 03 07 09 11 13 15 IN —PROCESS 1 -.025 SQ REF — r

SOT-227 Package

Abstract: Barksdale newark Sirectifier ITO-220
Contextual Info: E L E C T R O N I C Our Package January 2007 /Rev. 2 SOD-523 SOT-23 SOT-323 SOT-363 SOT-563 SOT-23-6 SMA SMB SMC DO-41 DO-201AD TO-126 TO-92 D-PAK D2-PAK TO-220 ITO-220 Fig. 9 Fig. 10 Fig. 12 Fig. 17 Fig. 14 Fig. 15 TO-247/ TO-3P Fig. 16 SOT-227 Sirectifier Global Corp., Delaware, U.S.A.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C14531B 12-B it Parity Tree L SUFFIX CERAMIC CASE 620 The MC14531B 12 -b it parity tree is constructed with MOS P -channel and N -channel enhancem ent mode devices in a single monolithic structure. The circuit consists of 12 d a ta -b it inputs DO thru D11 , and even or odd parity

MC14531B

Abstract: MC14XXXBCL MC14XXXBCP MC14XXXBD
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M C14531B 12-Bit Parity Tree L SUFFIX CERAM IC CASE 620 The MC14531B 12 -b it parity tree is constructed with MOS P -channel and N -channel enhancement mode devices in a single monolithic structure. The circuit consists of 12 d a ta -b it inputs DO thru D11 , and even or odd parity

a38a

Contextual Info: 1N3673A/RA asii SILICON RECTIFIER DESCRIPTION: The 1N3673A/RA is a Medium Current Rectifier for General Purpose Power Supply Applications. • 1N3673A = Anode to Stud • 1N3673RA = Cathode to Stud PACKAGE STYLE DO- 4 MAXIMUM RATINGS 12 A Io AVG @ Te = 15O 0C

REJ03G0236-0700

Contextual Info: HZ-P Series Silicon Planar Zener Diode for Voltage Controller & Voltage Limiter REJ03G0236-0700 Rev.7.00 Nov 12, 2007 Features • Wide zener voltage range from 1.88 V through 40 V provide flexible application. • Glass package DO-41 structure ensures high reliability.

Contextual Info: Low Distortion, 3.2 GHz, RF DGA ADA4961 Data Sheet VCC3 VCC2 VCC1 PM PWUP FUNCTIONAL BLOCK DIAGRAM 24 23 22 21 20 19 EXPOSED PAD VIN+ VIN– ADA4961 17 VOUT+ 2 0dB TO 21dB ATTEN +15dB 16 VOUT– 3 18 DNC 15 DNC 11 12 13 6 NOTES 1. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.

DIODE 1N1206

Abstract: 1N1206 1N1199 1N1202 1N1200 1N1204 1N1199A 1N1206AR
Contextual Info: 1N1199A thru 1N1206AR Silicon Standard Recovery Diode VRRM = 50 V - 1000 V IF = 12 A Features • High Surge Capability • Types up to 1000 V VRRM DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage

mixer diode

Abstract: BAT51 microwave diode ratings BAT51E DO-37
Contextual Info: BAT51E MICROWAVE MIXER DIODE PACKAGE STYLE DO- 37 DESCRIPTION: The ASI BAT51E is a Silicon Microwave Mixer Diode Designed for low noise performance in Applications Operating from 12 to 18 GHz. FEATURES: • • • • Low Noise Fugure Available in reverse polarity by

1N1206A

Abstract: 1N206A
Contextual Info: 1N1206A/RA a s ii SILICON RECTIFIER DESCRIPTION: The 1N1206A/RA is a Medium Current Rectifiers Designed for General Purpose Power Supply Applications. • 1N206A = Anode to Stud • 1N206RA = Cathode to Stud PACKAGE STYLE DO- 4 MAXIMUM RATINGS Io 12 A @Te = 15o 0C

BAT51

Abstract: microwave mixer diode mr 818 diode mixer diode microwave diode ratings 3004 diode noise diode DO-37 MATCHED PAIRS
Contextual Info: BAT51 MICROWAVE MIXER DIODE PACKAGE STYLE DO- 37 DESCRIPTION: The ASI BAT51 is a Silicon Microwave Mixer Diode Designed for low noise performance in Applications Operating from 12 to 18 GHz. FEATURES: • • • • Low Noise Fugure Available in reverse polarity by

MSM6800A

Abstract: mc5727 MSM6800 qualcomm chipsets "at command" IS-856 qualcomm chipsets at command IS-637-A qualcomm PM Qualcomm MSM6800 qualcomm cdma chipset command
Contextual Info: MC5727 PCI EXPRESS MINI CARD POWERFUL, COST EFFECTIVE, STANDARDS-BASED 1XEV-DO REV A ENGINE MC5727 PCI Express Mini Card Technical Specifications n Package Length: 51 mm Width: 30 mm Thickness: 4.5 mm Weight: under 12 g n Power 3.0 ~ 3.6V power supply

Contextual Info: DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] REVISION B PESS-XX-XX-X-XX.XX-XX-XXX No OF POSITIONS -02: 2 POSITIONS -04: 4 POSITIONS -06: 6 POSITIONS -08: 8 POSITIONS LEAD STYLE -10: 10 AWG 600 V C-310-1012-X -12: 12 AWG 600 V (C-310-1012-X) DO NOT SCALE FROM