DMP1096UCB4 Search Results
DMP1096UCB4 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| DMP1096UCB4 |
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P-CHANNEL ENHANCEMENT MODE MOSFET | Original | 159.39KB | 6 | ||
| DMP1096UCB4-7 |
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FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 2.6A 4-UFCSP | Original | 6 |
DMP1096UCB4 Price and Stock
Diodes Incorporated DMP1096UCB4-7Small Signal Field-Effect Transistor, 2.4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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DMP1096UCB4-7 | 10,552 |
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Get Quote | |||||||
DMP1096UCB4 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
e 102m 3kVContextual Info: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(on and yet maintain superior switching performance, making it ideal for high efficiency power management |
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dmp1096ucb4aec-q101u-wlb1010-4ds31954+1 | |
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Contextual Info: DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 102mΩ @ VGS = -4.5V -2.6A 116mΩ @ VGS = -2.5V -2.4A V(BR)DSS • • • • • • • -12V Description and Applications • • • Low Qg & Qgd Small Footprint Low Profile 0.62mm height |
Original |
dmp1096ucb4aec-q101wl-csp1010h6-ndds31954 | |
WL-CSP1010H6-4Contextual Info: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
dmp1096ucb4aec-q101ds31954wl-csp1010h6-4 | |
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Contextual Info: ` DMP1096UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -12V 102mΩ @ VGS = -4.5V 116mΩ @ VGS = -2.5V • • • • • • • ID TA = 25°C -2.6A -2.4A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching |
Original |
dmp1096ucb4ds31954 | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
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Original |
2000/53/ec2002/95/ec2011/65/eusor/2014-254+12 |